Inventor profile of:

Cheol Ham

City:

Suwon-si

Country:

South Korea

Published Applications:

14

Last publication date:

2026-06-04

Top Assignees for applications by Cheol Ham

The entities that hold a legal rights for patent applications filed by inventor Ham Cheol:

Recent patent applications by Ham Cheol

Cheol Ham from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260152687A1
Chemistry; metallurgy

COMPOSITION, METHOD OF TREATING METAL-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

#2 | 2026-04-09
US20260098346A1
Chemistry; metallurgy

COMPOSITION, METHOD OF TREATING METAL-CONTAINING LAYER BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

#3 | 2026-01-01
US20260005029A1
Electricity

COMPOSITION, METHOD OF TREATING METAL-CONTAINING LAYER BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

#4 | 2025-11-20
US20250354270A1
Chemistry; metallurgy

COMPOSITION, METHOD OF TREATING METAL-CONTAINING LAYER USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

#5 | 2025-08-28
US20250270482A1
Chemistry; metallurgy

COMPOSITION, CLEANING METHOD USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION

#6 | 2025-08-28
US20250270446A1
Chemistry; metallurgy

COMPOSITION, METHOD OF TREATING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF PREPARING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION

#7 | 2025-08-07
US20250250683A1
Chemistry; metallurgy

ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING LAYER BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE ETCHING COMPOSITION

#8 | 2025-07-03
US20250215575A1
Chemistry; metallurgy

ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING LAYER USING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

#9 | 2025-04-24
US20250129288A1
Chemistry; metallurgy

ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

#10 | 2025-01-09
US20250011650A1
Chemistry; metallurgy

ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

#11 | 2024-09-26
US20240318078A1
Chemistry; metallurgy

ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION

#12 | 2024-09-26
US20240318077A1
Chemistry; metallurgy

ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

#13 | 2023-12-21
US20230407174A1
Chemistry; metallurgy

ETCHING COMPOSITION, METHOD OF ETCHING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

#14 | 2023-11-30
US20230383218A1
Chemistry; metallurgy

CLEANING COMPOSITION FOR REMOVING RESIDUES ON SURFACE, METHOD OF CLEANING METAL-CONTAINING FILM BY USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

InventorID:

5920303 ⎘