Beaverton, Oregon
United States
39
2022-11-03
The entities that hold a legal rights for patent applications filed by inventor Nikonov Dmitri:
Dmitri Nikonov from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER
#2 | 2022-09-29Transition metal dichalcogenide based spin orbit torque memory device
#3 | 2022-04-21Transition metal dichalcogenide based magnetoelectric memory device
#4 | 2022-04-14DIFFERENTIAL MAGNETOELECTRIC SPIN ORBIT LOGIC
#5 | 2021-03-25Oscillator based neural network apparatus
#6 | 2020-08-13CAPSULE VECTOR SPIN NEURON IMPLEMENTATION OF A CAPSULE NEURAL NETWORK PRIMITIVE
#7 | 2020-07-30INSTRUCTION SET FOR HYBRID CPU AND ANALOG IN-MEMORY ARTIFICIAL INTELLIGENCE PROCESSOR
#8 | 2020-07-30HYBRID CPU AND ANALOG IN-MEMORY ARTIFICIAL INTELLIGENCE PROCESSOR
#9 | 2020-07-02Antiferromagnet based spin orbit torque memory device
#10 | 2020-07-02INTEGRATION SCHEME FOR FERROELECTRIC MEMORY WITH A DEEP TRENCH STRUCTURE
#11 | 2020-06-18Transistor structures formed with 2DEG at complex oxide interfaces
#12 | 2020-06-18Memory including a perovskite material
#13 | 2020-06-18Ferroelectric memory-based synapses
#14 | 2020-05-21Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
#15 | 2020-04-30Recurrent neuron implementation based on magneto-electric spin orbit logic
#16 | 2020-04-30Efficient analog in-memory matrix multiplication processor
#17 | 2020-03-26Perpendicular spin injection via spatial modulation of spin orbit coupling
#18 | 2020-03-12Semiconductor device heat extraction by spin thermoelectrics
#19 | 2020-03-05Radio frequency interconnections for oscillatory neural networks
#20 | 2020-01-02Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory
#21 | 2020-01-02Magnetic tunnel junction (MTJ) integration on backside of silicon
#22 | 2019-12-19Apparatus and method for boosting signal in magnetoelectric spin orbit logic
#23 | 2019-12-19Transition metal dichalcogenide based magnetoelectric memory device
#24 | 2019-12-19Spin orbit memory with multiferroic material
#25 | 2019-12-19Magnetoelectric spin orbit logic transistor with a spin filter
#26 | 2019-12-19Transition metal dichalcogenide based spin orbit torque memory device
#27 | 2019-10-03Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
#28 | 2019-10-03MAGNETIC MEMORY WITH CHIRAL ANTIFERROMAGNETIC MATERIAL FOR MAGNET SWITCHING
#29 | 2019-06-20Methods and apparatus to perform complex number generation and operation on a chip
#30 | 2018-05-24Exclusive-OR logic device with spin orbit torque effect
#31 | 2017-12-07MAGNETO-ELECTRIC DEVICES AND INTERCONNECT
#32 | 2017-09-14SPIN TRANSFER TORQUE MEMORY AND LOGIC DEVICES HAVING AN INTERFACE FOR INDUCING A STRAIN ON A MAGNETIC LAYER THEREIN
#33 | 2017-09-07Method for fabricating spin logic devices from in-situ deposited magnetic stacks
#34 | 2017-03-09Tunneling field effect transistors with a variable bandgap channel
#35 | 2016-07-14VOLTAGE CONTROLLED NANO-MAGNETIC RANDOM NUMBER GENERATOR
#36 | 2016-02-11MTJ spin hall MRAM bit-cell and array
#37 | 2014-06-26Reduced scale resonant tunneling field effect transistor
#38 | 2014-04-03Repeated spin current interconnects
#39 | 2014-01-02Spin hall effect memory
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