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Inventor profile of:

Tae-Won Ha

City:

Seongnam-si

Country:

South Korea

Published Applications:

21

Last publication date:

2020-09-24

Top Assignees for applications by Tae-Won Ha

The entities that hold a legal rights for patent applications filed by inventor Ha Tae-Won:

Recent patent applications by Ha Tae-Won

Tae-Won Ha from Seongnam-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-09-24
US20200303547A1
Electricity

Semiconductor device including a first fin active region, a second fin active region and a field region

 #2 | 2019-05-02
US20190131417A1
Electricity

Semiconductor device

 #3 | 2019-03-21
US20190088779A1
Electricity

Semiconductor device and method for fabricating the same

 #4 | 2018-12-20
US20180366582A1
Electricity

Semiconductor device including a first fin active region and a second fin active region

 #5 | 2018-07-26
US20180211887A1
Electricity

Semiconductor device

 #6 | 2017-09-28
US20170278966A1
Electricity

Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern

 #7 | 2017-07-27
US20170213771A1
Electricity

Semiconductor device with conductive pattern on insulating line pattern on spacer on field insulating film in trench between fin patterns

 #8 | 2017-04-27
US20170117192A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

 #9 | 2017-04-20
US20170110576A1
Electricity

Semiconductor device and method for fabricating the same

 #10 | 2016-06-09
US20160163706A1
Electricity

Semiconductor device having a substrate including a first active region and a second active region

 #11 | 2016-05-05
US20160126351A1
Electricity

Semiconductor device and method for fabricating the same

 #12 | 2016-04-21
US20160111428A1
Electricity

High-integration semiconductor device and method for fabricating the same

 #13 | 2016-03-31
US20160093620A1
Electricity

Semiconductor device and method for fabricating the same

 #14 | 2016-02-11
US20160043084A1
Electricity

Semiconductor device and method for fabricating the same

 #15 | 2015-12-10
US20150357427A1
Electricity

Integrated Circuit Device with Metal Gates Including Diffusion Barrier Layers and Fabricating Methods Thereof

 #16 | 2015-12-10
US20150357426A1
Electricity

Method for fabricating semiconductor device including replacement process of forming at least one metal gate structure

 #17 | 2015-07-30
US20150214227A1
Electricity

High-integration semiconductor device and method for fabricating the same

 #18 | 2015-01-15
US20150014780A1
Electricity

High integration semiconductor device and method for fabricating the same

 #19 | 2014-12-18
US20140370699A1
Electricity

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

 #20 | 2014-08-28
US20140239405A1
Electricity

Semiconductor device and fabricating method thereof

 #21 | 2014-01-02
US20140001543A1
Electricity

Integrated circuit device with metal gates including diffusion barrier layers and fabricating methods thereof
InventorID:

592829 ⎘