Milan
Italy
38
2024-11-21
The entities that hold a legal rights for patent applications filed by inventor Robustelli Mattia:
Mattia Robustelli from Milan, IT has applied for patents for these inventions. The list has both pending applications and granted patents:
Programming techniques for polarity-based memory cells
#2 | 2024-09-26READING A MULTI-LEVEL MEMORY CELL
#3 | 2024-07-04Cross-point pillar architecture for memory arrays
#4 | 2024-06-20ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
#5 | 2024-04-25Apparatus with multi-bit cell read mechanism and methods for operating the same
#6 | 2024-02-08DOPANT-MODULATED ETCHING FOR MEMORY DEVICES
#7 | 2024-01-25UNIPOLAR PROGRAMMING OF MEMORY CELLS
#8 | 2023-11-30WORDLINE BOOST BY CHARGE SHARING IN A MEMORY DEVICE
#9 | 2023-11-09Techniques for multi-level chalcogenide memory cell programming
#10 | 2023-11-02Asymmetric memory cell design
#11 | 2023-11-02Write latency and energy using asymmetric cell design
#12 | 2023-06-29Cross-point pillar architecture for memory arrays
#13 | 2023-02-02Programming techniques for polarity-based memory cells
#14 | 2022-09-22Reading a multi-level memory cell
#15 | 2022-08-18Techniques for programming multi-level self-selecting memory cell
#16 | 2022-04-21Programming memory cells using asymmetric current pulses
#17 | 2022-04-07Adaptive write operations for a memory device
#18 | 2022-03-03Programming techniques for polarity-based memory cells
#19 | 2022-01-13Reading a multi-level memory cell
#20 | 2022-01-04Programming memory cells using asymmetric current pulses
#21 | 2021-09-02Implementations to store fuse data in memory devices
#22 | 2021-02-11Dopant-modulated etching for memory devices
#23 | 2021-01-28Adaptive write operations for a memory device
#24 | 2021-01-21Techniques for programming multi-level self-selecting memory cell
#25 | 2021-01-21Implementations to store fuse data in memory devices
#26 | 2020-09-03Dedicated read voltages for data structures
#27 | 2020-05-07Dedicated read voltages for data structures
#28 | 2019-12-12Techniques for programming multi-level self-selecting memory cell
#29 | 2019-08-15Dopant-modulated etching for memory devices
#30 | 2017-08-24Phase change memory devices and systems having reduced voltage threshold drift and associated methods
#31 | 2017-04-18Phase change memory devices and systems having reduced voltage threshold drift and associated methods
#32 | 2014-10-30Reading memory cell history during program operation for adaptive programming
#33 | 2014-07-03Semiconductor memory device and method of operating the same
#34 | 2013-10-03Reading memory cell history during program operation for adaptive programming
#35 | 2012-09-06Reading memory cell history during program operation for adaptive programming
#36 | 2012-05-03Semiconductor memory device and method of operating the same
#37 | 2011-10-13Dynamic polarization for reducing stress induced leakage current
#38 | 2011-05-10Dynamic polarization for reducing stress induced leakage current
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