Fremont, California
United States
21
2014-01-09
The entities that hold a legal rights for patent applications filed by inventor Chen Eugene Youjun:
Eugene Youjun Chen from Fremont, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetic tunneling junction seed, capping, and spacer layer materials
#2 | 2012-03-29Magnetic element having perpendicular anisotropy with enhanced efficiency
#3 | 2012-01-19Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements
#4 | 2011-03-17Magnetic element having perpendicular anisotropy with enhanced efficiency
#5 | 2010-09-30Magnetic element utilizing free layer engineering
#6 | 2010-07-20Magnetic element utilizing free layer engineering
#7 | 2010-03-25Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
#8 | 2010-02-16Magnetic memories utilizing a magnetic element having an engineered free layer
#9 | 2009-08-27Current driven memory cells having enhanced current and enhanced current symmetry
#10 | 2008-08-28Current driven memory cells having enhanced current and enhanced current symmetry
#11 | 2008-06-26Method and system for providing a magnetic memory structure utilizing spin transfer
#12 | 2007-12-27Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
#13 | 2007-12-06Method and system for providing a magnetic memory structure utilizing spin transfer
#14 | 2007-10-25On-plug magnetic tunnel junction devices based on spin torque transfer switching
#15 | 2007-09-18Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
#16 | 2007-09-18Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
#17 | 2007-07-26Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
#18 | 2007-05-03Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
#19 | 2007-03-29Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
#20 | 2007-03-22Magnetic device having multilayered free ferromagnetic layer
#21 | 2007-03-22Magnetic device having stabilized free ferromagnetic layer
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