Milpitas, California
United States
102
2014-09-02
96
2014-09-02
These are the the leading inventors for applications assigned to Grandis, Inc.:
Grandis, Inc. based in Milpitas, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Probabilistic switching determination for electrical devices
#2 | 2014-03-06 ✅ Patent 8,891,290 granted on 2014-11-18Method and system for providing inverted dual magnetic tunneling junction elements
#3 | 2014-01-30 ✅ Patent 9,001,607 granted on 2015-04-07Method and design for high performance non-volatile memory
#4 | 2013-02-07 ✅ Patent 8,642,358 granted on 2014-02-04Method for fabricating magnetic tunnel junction device
#5 | 2012-10-11 ✅ Patent 8,625,339 granted on 2014-01-07Multi-cell per memory-bit circuit and method
#6 | 2012-09-27 ✅ Patent 9,141,473 granted on 2015-09-22Parallel memory error detection and correction
#7 | 2012-09-13 ✅ Patent 8,283,186 granted on 2012-10-09Magnetic memory device and method for manufacturing the same
#8 | 2012-08-16 ✅ Patent 8,723,557 granted on 2014-05-13Multi-supply symmetric driver circuit and timing method
#9 | 2012-07-05 ✅ Patent 8,446,761 granted on 2013-05-21Method and system for providing multiple logic cells in a single stack
#10 | 2012-07-05 ✅ Patent 8,432,009 granted on 2013-04-30Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
#11 | 2012-06-21 ✅ Patent 10,446,209 granted on 2019-10-15Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#12 | 2012-05-24 ✅ Patent 8,456,926 granted on 2013-06-04Memory write error correction circuit
#13 | 2012-05-10 ✅ Patent 8,399,941 granted on 2013-03-19Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
#14 | 2012-03-29 ✅ Patent 8,456,898 granted on 2013-06-04Magnetic element having perpendicular anisotropy with enhanced efficiency
#15 | 2012-02-16 ✅ Patent 8,374,048 granted on 2013-02-12Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
#16 | 2012-01-26 ✅ Patent 9,099,181 granted on 2015-08-04Non-volatile static ram cell circuit and timing method
#17 | 2012-01-19 ✅ Patent 8,546,896 granted on 2013-10-01Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements
#18 | 2011-12-13 ✅ Patent 8,077,508 granted on 2011-12-13Dynamic multistate memory write driver
#19 | 2011-12-08 ✅ Patent 8,315,090 granted on 2012-11-20Pseudo page mode memory architecture and method
#20 | 2011-11-10 ✅ Patent 8,411,497 granted on 2013-04-02Method and system for providing a magnetic field aligned spin transfer torque random access memory
#21 | 2011-10-20 ✅ Patent 8,248,100 granted on 2012-08-21Method and system for providing spin transfer based logic devices
#22 | 2011-10-06 ✅ Patent 8,476,723 granted on 2013-07-02Magnetic element having low saturation magnetization
#23 | 2011-09-01 ✅ Patent 8,213,221 granted on 2012-07-03Magnetic shielding in magnetic multilayer structures
#24 | 2011-06-16 ✅ Patent 8,422,285 granted on 2013-04-16Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
#25 | 2011-06-16METHOD AND SYSTEM FOR PROVIDING A HIGH DENSITY MEMORY CELL FOR SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY
#26 | 2011-06-16SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#27 | 2011-05-05 ✅ Patent 8,159,866 granted on 2012-04-17Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
#28 | 2011-03-31Fabrication of Magnetic Element Arrays
#29 | 2011-03-17 ✅ Patent 8,072,800 granted on 2011-12-06Magnetic element having perpendicular anisotropy with enhanced efficiency
#30 | 2011-03-17 ✅ Patent 8,385,106 granted on 2013-02-26Method and system for providing a hierarchical data path for spin transfer torque random access memory
#31 | 2011-03-17 ✅ Patent 8,077,501 granted on 2011-12-13Differential read and write architecture
#32 | 2011-02-10 ✅ Patent 8,913,350 granted on 2014-12-16Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#33 | 2011-02-10METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS
#34 | 2011-01-20SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION
#35 | 2010-09-30 ✅ Patent 7,916,433 granted on 2011-03-29Magnetic element utilizing free layer engineering
#36 | 2010-08-26 ✅ Patent 7,957,179 granted on 2011-06-07Magnetic shielding in magnetic multilayer structures
#37 | 2010-07-20 ✅ Patent 7,760,474 granted on 2010-07-20Magnetic element utilizing free layer engineering
#38 | 2010-06-10 ✅ Patent 8,378,438 granted on 2013-02-19Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements
#39 | 2010-03-25 ✅ Patent 7,859,034 granted on 2010-12-28Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
#40 | 2010-03-18 ✅ Patent 7,894,248 granted on 2011-02-22Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
#41 | 2010-02-16 ✅ Patent 7,663,848 granted on 2010-02-16Magnetic memories utilizing a magnetic element having an engineered free layer
#42 | 2010-01-07 ✅ Patent 8,202,737 granted on 2012-06-19Magnetic memory device and method for manufacturing the same
#43 | 2009-08-27 ✅ Patent 7,791,931 granted on 2010-09-07Current driven memory cells having enhanced current and enhanced current symmetry
#44 | 2009-07-23METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC MEMORIES UTILIZING UNIDIRECTIONAL POLARITY SELECTION DEVICES
#45 | 2009-05-12 ✅ Patent 7,532,505 granted on 2009-05-12Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
#46 | 2009-03-10 ✅ Patent 7,502,249 granted on 2009-03-10Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
#47 | 2009-02-26 ✅ Patent 7,982,275 granted on 2011-07-19Magnetic element having low saturation magnetization
#48 | 2009-02-12 ✅ Patent 7,764,536 granted on 2010-07-27Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory
#49 | 2009-02-03 ✅ Patent 7,486,551 granted on 2009-02-03Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
#50 | 2008-12-18 ✅ Patent 7,800,942 granted on 2010-09-21Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
#51 | 2008-12-18 ✅ Patent 7,742,328 granted on 2010-06-22Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
#52 | 2008-11-27 ✅ Patent 7,486,552 granted on 2009-02-03Method and system for providing a spin transfer device with improved switching characteristics
#53 | 2008-11-06 ✅ Patent 7,738,287 granted on 2010-06-15Method and system for providing field biased magnetic memory devices
#54 | 2008-09-25 ✅ Patent 7,821,088 granted on 2010-10-26Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
#55 | 2008-08-28 ✅ Patent 7,515,457 granted on 2009-04-07Current driven memory cells having enhanced current and enhanced current symmetry
#56 | 2008-06-26 ✅ Patent 7,623,369 granted on 2009-11-24Method and system for providing a magnetic memory structure utilizing spin transfer
#57 | 2008-03-13 ✅ Patent 7,851,840 granted on 2010-12-14Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
#58 | 2007-12-27 ✅ Patent 7,379,327 granted on 2008-05-27Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
#59 | 2007-12-06 ✅ Patent 7,345,912 granted on 2008-03-18Method and system for providing a magnetic memory structure utilizing spin transfer
#60 | 2007-09-18 ✅ Patent 7,272,035 granted on 2007-09-18Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
#61 | 2007-09-18 ✅ Patent 7,272,034 granted on 2007-09-18Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
#62 | 2007-07-26 ✅ Patent 7,430,135 granted on 2008-09-30Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
#63 | 2007-07-12 ✅ Patent 7,821,087 granted on 2010-10-26Spin transfer magnetic element having low saturation magnetization free layers
#64 | 2007-06-12 ✅ Patent 7,230,845 granted on 2007-06-12Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
#65 | 2007-06-05 ✅ Patent 7,227,773 granted on 2007-06-05Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
#66 | 2007-05-31 ✅ Patent 7,495,303 granted on 2009-02-24Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
#67 | 2007-05-03 ✅ Patent 7,286,395 granted on 2007-10-23Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
#68 | 2007-03-29 ✅ Patent 7,489,541 granted on 2009-02-10Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
#69 | 2007-03-22 ✅ Patent 7,973,349 granted on 2011-07-05Magnetic device having multilayered free ferromagnetic layer
#70 | 2007-03-22 ✅ Patent 7,777,261 granted on 2010-08-17Magnetic device having stabilized free ferromagnetic layer
#71 | 2007-03-13 ✅ Patent 7,190,611 granted on 2007-03-13Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
#72 | 2007-03-06 ✅ Patent 7,187,577 granted on 2007-03-06Method and system for providing current balanced writing for memory cells and magnetic devices
#73 | 2007-03-01 ✅ Patent 7,224,601 granted on 2007-05-29Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
#74 | 2007-01-04 ✅ Patent 7,518,835 granted on 2009-04-14Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
#75 | 2006-12-14 ✅ Patent 7,289,356 granted on 2007-10-30Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
#76 | 2006-10-05 ✅ Patent 7,190,612 granted on 2007-03-13Circuitry for use in current switching a magnetic cell
#77 | 2006-08-31 ✅ Patent 7,242,048 granted on 2007-07-10Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
#78 | 2006-06-29 ✅ Patent 7,241,631 granted on 2007-07-10MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
#79 | 2006-05-18 ✅ Patent 7,126,202 granted on 2006-10-24Spin scattering and heat assisted switching of a magnetic element
#80 | 2006-04-20 ✅ Patent 7,531,882 granted on 2009-05-12Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#81 | 2006-03-09 ✅ Patent 7,369,427 granted on 2008-05-06Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
#82 | 2006-03-07 ✅ Patent 7,009,877 granted on 2006-03-07Three-terminal magnetostatically coupled spin transfer-based MRAM cell
#83 | 2006-01-26 ✅ Patent 7,576,956 granted on 2009-08-18Magnetic tunnel junction having diffusion stop layer
#84 | 2005-12-22 ✅ Patent 7,098,494 granted on 2006-08-29Re-configurable logic elements using heat assisted magnetic tunneling elements
#85 | 2005-11-17 ✅ Patent 7,088,609 granted on 2006-08-08Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
#86 | 2005-11-17 ✅ Patent 7,057,921 granted on 2006-06-06Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
#87 | 2005-10-27 ✅ Patent 7,233,039 granted on 2007-06-19Spin transfer magnetic elements with spin depolarization layers
#88 | 2005-10-25 ✅ Patent 6,958,927 granted on 2005-10-25Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
#89 | 2005-09-15 ✅ Patent 7,106,624 granted on 2006-09-12Magnetic element utilizing spin transfer and an mram device using the magnetic element
#90 | 2005-09-01 ✅ Patent 6,992,359 granted on 2006-01-31Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
#91 | 2005-08-25 ✅ Patent 6,967,863 granted on 2005-11-22Perpendicular magnetization magnetic element utilizing spin transfer
#92 | 2005-08-25 ✅ Patent 7,242,045 granted on 2007-07-10Spin transfer magnetic element having low saturation magnetization free layers
#93 | 2005-08-23 ✅ Patent 6,933,155 granted on 2005-08-23Methods for providing a sub .15 micron magnetic memory structure
#94 | 2005-08-18 ✅ Patent 7,110,287 granted on 2006-09-19Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
#95 | 2005-07-19 ✅ Patent 6,920,063 granted on 2005-07-19Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
#96 | 2005-05-19 ✅ Patent 7,282,755 granted on 2007-10-16Stress assisted current driven switching for magnetic memory applications
#97 | 2005-05-03 ✅ Patent 6,888,742 granted on 2005-05-03Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
#98 | 2005-03-24 ✅ Patent 7,161,829 granted on 2007-01-09Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
#99 | 2005-03-03 ✅ Patent 6,985,385 granted on 2006-01-10Magnetic memory element utilizing spin transfer switching and storing multiple bits
#100 | 2005-02-24 ✅ Patent 7,245,462 granted on 2007-07-17Magnetoresistive element having reduced spin transfer induced noise
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