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Inventor profile of:

Yusuke Mori

City:

Katano

Country:

Japan

Published Applications:

12

Last publication date:

2012-06-07

Top Assignees for applications by Yusuke Mori

The entities that hold a legal rights for patent applications filed by inventor Mori Yusuke:

Yusuke MORI 4 Osaka, Japan
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 3 Osaka, Japan
Matsushita Electric Industrial Co., Ltd. 2 Kadoma-shi, Japan
Sharp Kabushiki Kaisha 2 Osaka-shi, Japan
Sharp Kabushiki Kaisha 2 Osaka, Japan
Yusuke Mori 2 Katano-Shi, Japan
SUMITOMO ELECTRIC INDUSTRIES, LTD. 2 Osaka, Japan
Osaka University 1 Osaka-Fu, Japan
Toyoda Gosei Co., Ltd. 1 Aichi-ken, Japan
Takatomo Susaki 1 Osaka, Japan
Yasuo Kitaoka 1 Osaka, Japan
Naoya Miyoshi 1 Osaka, Japan
NGK INSULATORS, LTD. 1 Aichi-ken, Japan
OSAKA UNIVERSITY 1 Suita-shi, Japan
NGK INSULATORS, LTD. 1 Aichi-prefecture, Japan
MITSUBISHI DENKI KABUSHIKI KAISHA 1 Tokyo, Japan
Japan Science and Technology Agency 1 Saitama, Japan

Recent patent applications by Mori Yusuke

Yusuke Mori from Katano, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-06-07

US20120137961A1

Chemistry; metallurgy

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

#2 | 2010-06-17

US20100148120A1

Performing operations; transporting

Light-emitting apparatus, phosphorescent portion, and method of producing the same

#3 | 2008-11-20

US20080283968A1

Chemistry; metallurgy

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

#4 | 2008-09-11

US20080217579A1

Performing operations; transporting

Light-emitting apparatus, phosphor and method of producing it

#5 | 2008-04-22

US10809033

Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method

#6 | 2008-01-31

US20080022921A1

Chemistry; metallurgy

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

#7 | 2007-05-10

US20070101931A1

Chemistry; metallurgy

Method for producing semiconductor crystal

#8 | 2006-06-06

US10647107

Light-emitting apparatus, phosphor, and method of producing it

#9 | 2006-05-18

US20060102066A1

Chemistry; metallurgy

Method for preparing borate-based crystal and laser oscillation apparatus

#10 | 2005-10-13

US20050225837A1

Wavelength conversion method, wavelength conversion device, and laser beam machine

#11 | 2005-03-17

US20050059229A1

Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same

#12 | 2005-03-03

US20050048686A1

Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same

InventorID:

6091793 ⎘