Itami
Japan
49
2020-06-04
The entities that hold a legal rights for patent applications filed by inventor Uematsu Koji:
Koji Uematsu from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
#2 | 2018-06-14Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
#3 | 2015-12-31Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
#4 | 2015-07-09Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
#5 | 2015-01-08Composite of III-nitride crystal on laterally stacked substrates
#6 | 2014-12-18Group III nitride crystal substrates and group III nitride crystal
#7 | 2014-06-26Composite of III-nitride crystal on laterally stacked substrates
#8 | 2014-03-06GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)
#9 | 2013-12-19Method for producing group III nitride crystal
#10 | 2013-11-07GaN-crystal free-standing substrate and method for producing the same
#11 | 2013-08-29Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
#12 | 2013-06-27Method of manufacturing III-nitride crystal
#13 | 2013-06-13Method of manufacturing GaN-based film and composite substrate used therefor
#14 | 2013-02-14Method of manufacturing GaN-based film
#15 | 2012-12-27Group III nitride crystal and method for producing the same
#16 | 2012-12-13Group-III nitride crystal composite
#17 | 2012-09-13Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
#18 | 2012-09-13Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
#19 | 2012-06-07III-V compound crystal and semiconductor electronic circuit element
#20 | 2012-05-17Method of manufacturing GaN-based film
#21 | 2012-02-09GaN-crystal free-standing substrate and method for producing the same
#22 | 2012-02-09Method for growing group III nitride crystal
#23 | 2011-10-27III-nitride crystal substrate and III-nitride semiconductor device
#24 | 2011-05-12GaN substrate and light-emitting device
#25 | 2011-03-17Fabrication method and fabrication apparatus of group III nitride crystal substance
#26 | 2011-03-10GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof
#27 | 2010-08-19III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device
#28 | 2010-07-29Group III nitride crystal and method of its growth
#29 | 2010-06-24Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
#30 | 2010-06-10Method of growing III-nitride crystal
#31 | 2010-04-15III-V compound crystal and semiconductor electronic circuit element
#32 | 2010-01-14Fabrication method and fabrication apparatus of group III nitride crystal substance
#33 | 2009-12-24III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device
#34 | 2009-12-24Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
#35 | 2009-09-24Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
#36 | 2009-08-06Method for manufacturing gallium nitride crystal and gallium nitride wafer
#37 | 2009-08-06AlGaInN crystal substrate, semiconductor device, and method of manufacturing the same
#38 | 2008-12-04Growth method of GaN crystal, and GaN crystal substrate
#39 | 2008-09-04Light emitting apparatus
#40 | 2008-02-14Group III-V crystal
#41 | 2007-07-19III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device
#42 | 2007-06-28Fabrication method and fabrication apparatus of group III nitride crystal substance
#43 | 2007-05-03Nitride semiconductor wafer
#44 | 2005-12-15Nitride single crystal and producing method thereof
#45 | 2005-11-03Semiconductor light-emitting device
#46 | 2005-10-13Group III-V crystal and manufacturing method thereof
#47 | 2005-08-25AlInGaN mixture crystal substrate, method of growing AlInGaN mixture crystal substrate and method of producing AlInGaN mixture crystal substrate
#48 | 2005-06-09Light emitting device
#49 | 2005-03-24Light emitting apparatus
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