Inventor profile of:

Ryu Hirota

City:

Itami

Country:

Japan

Published Applications:

20

Last publication date:

2020-01-30

Top Assignees for applications by Ryu Hirota

The entities that hold a legal rights for patent applications filed by inventor Hirota Ryu:

Recent patent applications by Hirota Ryu

Ryu Hirota from Itami, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-01-30
US20200032419A1
Chemistry; metallurgy

Gallium nitride substrate

#2 | 2018-08-23
US20180237946A1
Chemistry; metallurgy

Gallium nitride substrate

#3 | 2017-05-18
US20170137966A1
Chemistry; metallurgy

Gallium nitride substrate

#4 | 2017-04-13
US20170101724A1
Chemistry; metallurgy

Gallium nitride substrate

#5 | 2012-06-07
US20120142168A1
Chemistry; metallurgy

III-V compound crystal and semiconductor electronic circuit element

#6 | 2011-10-27
US20110260295A1
Chemistry; metallurgy

III-nitride crystal substrate and III-nitride semiconductor device

#7 | 2011-03-17
US20110065265A1
Electricity

Fabrication method and fabrication apparatus of group III nitride crystal substance

#8 | 2010-07-29
US20100189624A1
Chemistry; metallurgy

Group III nitride crystal and method of its growth

#9 | 2010-04-15
US20100090313A1
Chemistry; metallurgy

III-V compound crystal and semiconductor electronic circuit element

#10 | 2010-01-14
US20100009526A1
Electricity

Fabrication method and fabrication apparatus of group III nitride crystal substance

#11 | 2009-12-24
US20090315150A1
Chemistry; metallurgy

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

#12 | 2008-11-20
US20080283968A1
Chemistry; metallurgy

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

#13 | 2008-02-14
US20080038580A1
Electricity

Group III-V crystal

#14 | 2008-01-31
US20080022921A1
Chemistry; metallurgy

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

#15 | 2007-06-28
US20070148920A1
Electricity

Fabrication method and fabrication apparatus of group III nitride crystal substance

#16 | 2005-11-03
US20050242357A1
Electricity

Semiconductor light-emitting device

#17 | 2005-10-13
US20050227472A1
Electricity

Group III-V crystal and manufacturing method thereof

#18 | 2005-08-25
US20050183658A1
Chemistry; metallurgy

AlInGaN mixture crystal substrate, method of growing AlInGaN mixture crystal substrate and method of producing AlInGaN mixture crystal substrate

#19 | 2005-07-28
US20050164419A1
Chemistry; metallurgy

Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device

#20 | 2005-07-14
US20050153471A1
Chemistry; metallurgy

Method of manufacturing group-III nitride crystal

InventorID:

6092216 ⎘