Inventor profile of:

Ionut Radu

City:

Crolles

Country:

France

Published Applications:

53

Last publication date:

2024-11-28

Top Assignees for applications by Ionut Radu

The entities that hold a legal rights for patent applications filed by inventor Radu Ionut:

Recent patent applications by Radu Ionut

Ionut Radu from Crolles, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-28
US20240396520A1
Electricity

HETEROSTRUCTURE AND METHOD OF FABRICATION

#2 | 2024-01-18
US20240021461A1
Electricity

Method of mechanical separation for a double layer transfer

#3 | 2023-11-23
US20230378931A1
Electricity

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

#4 | 2023-08-31
US20230275559A1
Electricity

Heterostructure and method of fabrication

#5 | 2023-08-17
US20230260841A1
Electricity

Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC

#6 | 2023-08-10
US20230253949A1
Electricity

Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate

#7 | 2023-07-06
US20230217832A1
Electricity

COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECTRIC LAYERS BONDED TO SUBSTRATES, AND ACOUSTIC WAVE DEVICES FORMED WITH SUCH COMPOSITE SUBSTRATES

#8 | 2023-05-25
US20230160102A1
Chemistry; metallurgy

Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC

#9 | 2022-09-01
US20220277988A1
Electricity

Structures for radiofrequency applications and related methods

#10 | 2021-05-13
US20210143053A1
Electricity

Structures for radiofrequency applications and related methods

#11 | 2021-04-29
US20210121103A1
Human necessities

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

#12 | 2021-04-22
US20210118717A1
Electricity

Method of mechanical separation for a double layer transfer

#13 | 2021-02-25
US20210058058A1
Electricity

Heterostructure and method of fabrication

#14 | 2020-09-17
US20200295138A1
Electricity

Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit

#15 | 2020-09-03
US20200280298A1
Electricity

Heterostructure and method of fabrication

#16 | 2020-07-16
US20200228088A1
Electricity

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

#17 | 2020-05-21
US20200161172A1
Electricity

Method for locating devices

#18 | 2019-05-23
US20190157137A1
Electricity

Structure for radiofrequency applications

#19 | 2019-01-03
US20190007024A1
Electricity

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

#20 | 2019-01-03
US20190006577A1
Electricity

Method for manufacturing a monocrystalline piezoelectric layer

#21 | 2018-11-01
US20180316329A1
Electricity

COMPOSITE STRUCTURE AND ASSOCIATED PRODUCTION METHOD

#22 | 2018-10-25
US20180309426A1
Electricity

Surface acoustic wave device and associated production method

#23 | 2018-06-07
US20180159498A1
Electricity

Heterostructure and method of fabrication

#24 | 2017-07-20
US20170207164A1
Electricity

Method for fabricating semiconductor structures including a high resistivity layer, and related semiconductor structures

#25 | 2016-12-08
US20160358805A1
Electricity

Method of mechanical separation for a double layer transfer

#26 | 2016-07-07
US20160197006A1
Electricity

METHOD FOR LOCATING DEVICES

#27 | 2016-03-24
US20160086974A1
Electricity

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES INCLUDING TRANSISTOR CHANNELS HAVING DIFFERENT STRAIN STATES, AND RELATED SEMICONDUCTOR STRUCTURES

#28 | 2015-12-17
US20150364364A1
Electricity

Method for transferring a layer comprising a compressive stress layer and related structures

#29 | 2015-10-20
US14489798
Electricity

Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures

#30 | 2015-10-01
US20150279830A1
Electricity

METHOD FOR BONDING SEMICONDUCTOR WAFERS USING A MOLECULAR BONDING APPARATUS

#31 | 2015-08-13
US20150228535A1
Electricity

Bonded processed semiconductor structures and carriers

#32 | 2015-06-25
US20150179603A1
Electricity

Method for producing composite structure with metal/metal bonding

#33 | 2014-12-04
US20140357093A1
Electricity

Process for stabilizing a bonding interface, located within a structure which comprises an oxide layer and structure obtained

#34 | 2013-11-14
US20130299997A1
Electricity

Methods of forming bonded semiconductor structures

#35 | 2013-10-03
US20130256907A1
Electricity

Bonded processed semiconductor structures and carriers

#36 | 2013-08-22
US20130217206A1
Electricity

Methods of providing thin layers of crystalline semiconductor material, and related structures and devices

#37 | 2013-07-11
US20130175672A1
Electricity

Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods

#38 | 2013-03-28
US20130075868A1
Electricity

Methods of transferring layers of material in 3D integration processes and related structures and devices

#39 | 2013-02-07
US20130032272A1
Electricity

Apparatus for manufacturing semiconductor devices

#40 | 2013-01-31
US20130026663A1
Electricity

Method for curing defects in a semiconductor layer

#41 | 2013-01-31
US20130026608A1
Electricity

Process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate

#42 | 2012-10-04
US20120252189A1
Electricity

Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods

#43 | 2012-10-04
US20120252162A1
Electricity

Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods

#44 | 2012-09-27
US20120241821A1
Electricity

Heterostructure for electronic power components, optoelectronic or photovoltaic components

#45 | 2012-03-22
US20120067524A1
Electricity

APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES

#46 | 2012-01-19
US20120015497A1
Electricity

Preparing a Surface of a Sapphire Substrate for Fabricating Heterostructures

#47 | 2012-01-19
US20120013013A1
Electricity

Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region

#48 | 2012-01-19
US20120013012A1
Electricity

Methods of forming bonded semiconductor structures

#49 | 2011-12-22
US20110308721A1
Electricity

APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES

#50 | 2011-08-25
US20110207295A1
Electricity

Method of detaching semi-conductor layers at low temperature

#51 | 2011-06-02
US20110127581A1
Electricity

HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS

#52 | 2010-10-21
US20100264458A1
Electricity

Method for manufacturing heterostructures

#53 | 2008-06-19
US20080145650A1
Electricity

DOUBLE PLASMA UTBOX

InventorID:

61319 ⎘