Inventor profile of:

David Knapp

City:

Santa Clara, California

Country:

United States

Published Applications:

22

Last publication date:

2026-01-08

Top Assignees for applications by David Knapp

The entities that hold a legal rights for patent applications filed by inventor Knapp David:

Recent patent applications by Knapp David

David Knapp from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-08
US20260011569A1
Electricity

DRY ETCHING WITH ETCH BYPRODUCT SELF-CLEANING

#2 | 2025-12-18
US20250385082A1
Electricity

DUAL PRESSURE OXIDATION METHOD FOR FORMING AN OXIDE LAYER IN A FEATURE

#3 | 2024-08-08
US20240266180A1
Electricity

Enhanced etch selectivity using halides

#4 | 2024-08-08
US20240264336A1
Physics

NON-LINE-OF-SIGHT DEPOSITION OF COATING ON INTERNAL COMPONENTS OF ASSEMBLED DEVICE

#5 | 2024-04-18
US20240128091A1
Electricity

DRY ETCHING WITH ETCH BYPRODUCT SELF-CLEANING

#6 | 2023-09-14
US20230287568A1
Chemistry; metallurgy

ADVANCED BARRIER NICKEL OXIDE (BNiO) COATING DEVELOPMENT FOR PROCESS CHAMBER COMPONENTS VIA OZONE TREATMENT

#7 | 2023-06-29
US20230207291A1
Electricity

Dual pressure oxidation method for forming an oxide layer in a feature

#8 | 2020-10-01
US20200310001A1
Physics

Non-line-of-sight deposition of coating on internal components of assembled device

#9 | 2019-03-21
US20190088489A1
Electricity

Methods of depositing metal films using metal oxyhalide precursors

#10 | 2018-07-19
US20180204721A1
Electricity

Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use

#11 | 2018-04-05
US20180096834A1
Electricity

Chemical modification of hardmask films for enhanced etching and selective removal

#12 | 2018-01-16
US15283400
Electricity

Chemical modification of hardmask films for enhanced etching and selective removal

#13 | 2017-03-02
US20170062224A1
Electricity

Methods of depositing metal films using metal oxyhalide precursors

#14 | 2017-01-19
US20170016113A1
Chemistry; metallurgy

Deposition of metal films using beta-hydrogen free precursors

#15 | 2016-11-17
US20160336222A1
Electricity

Tungsten films by organometallic or silane pre-treatment of substrate

#16 | 2016-09-20
US14734222
Electricity

Selectively etching metals and metal nitrides conformally

#17 | 2016-06-23
US20160181150A1
Electricity

Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use

#18 | 2016-02-04
US20160032455A1
Chemistry; metallurgy

HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION

#19 | 2014-09-11
US20140255606A1
Chemistry; metallurgy

Methods for depositing films comprising cobalt and cobalt nitrides

#20 | 2014-08-28
US20140242806A1
Electricity

Metal amide deposition precursors and their stabilization with an inert ampoule liner

#21 | 2014-01-30
US20140030436A1
Chemistry; metallurgy

Methods for producing nickel-containing films

#22 | 2014-01-23
US20140023785A1
Chemistry; metallurgy

Method for producing nickel-containing films

InventorID:

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