Ralf Rudolf

SEMICONDUCTOR DEVICE INCLUDING TERMINATION TRENCH STRUCTURE OR SEGMENT

INTEGRATED CIRCUIT WITH GALVANIC ISOLATION STRUCTURE AND GATE DRIVER CIRCUIT

SEMICONDUCTOR DEVICE WITH A FIRST ISOLATION TRENCH AND A SECOND ISOLATION TRENCH AND METHOD OF MANUFACTURING

FIELD EFFECT TRANSISTOR HAVING A TRENCH GATE STRUCTURE

LATERAL HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A LATERAL HIGH VOLTAGE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A FIELD PLATE STRUCTURE

HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH DATA TRANSMISSION FROM A HIGH VOLTAGE DOMAIN TO A LOW VOLTAGE DOMAIN

SEMICONDUCTOR DEVICE HAVING SILICON PLUGS FOR TRENCH AND/OR MESA SEGMENTATION

SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITION REGION AND METHOD OF MANUFACTURING

HIGH-VOLTAGE SEMICONDUCTOR DEVICE

SEMICONDUCTOR-ON-INSULATOR DEVICE WITH LIGHTLY DOPED EXTENSION REGION

Semiconductor Device with Trench Structure and Production Method

Electronic circuit with several electronic switches connected in series and a drive circuit

Semiconductor device having a buried layer

Method for forming a power semiconductor device and a power semiconductor device

Method for producing a self-aligning masking layer

Semiconductor Device with a Laterally Varying Doping Profile, and Method for Manufacturing Thereof

Transistor Arrangement Including Power Transistors and Voltage Limiting Means

Insulation structure formed in a semiconductor substrate and method for forming an insulation structure

Semiconductor device with an insulating structure for insulating an electrode from a semiconductor body

Lateral semiconductor device and manufacturing method therefor

Semiconductor device and method for manufacturing a semiconductor device

Lateral SOI component having a reduced on resistance

SOI semiconductor component with increased dielectric strength