Inventor profile of:

Michael Eugene Givens

City:

Phoenix, Arizona

Country:

United States

Published Applications:

13

Last publication date:

2025-02-20

Top Assignees for applications by Michael Eugene Givens

The entities that hold a legal rights for patent applications filed by inventor Givens Michael Eugene:

Recent patent applications by Givens Michael Eugene

Michael Eugene Givens from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-02-20
US20250060671A1
Physics

SUBSTRATE PROCESSING APPARATUS AND METHOD

#2 | 2024-01-25
US20240030296A1
Electricity

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

#3 | 2023-12-28
US20230420256A1
Electricity

METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME

#4 | 2023-03-16
US20230078233A1
Electricity

METHOD OF FORMING STRUCTURES INCLUDING A VANADIUM OR INDIUM LAYER

#5 | 2022-11-17
US20220367647A1
Electricity

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

#6 | 2021-08-05
US20210242011A1
Electricity

Method of forming structures including a vanadium or indium layer

#7 | 2021-04-15
US20210111025A1
Electricity

Method of forming a photoresist underlayer and structure including same

#8 | 2021-02-04
US20210033977A1
Physics

Substrate processing apparatus and method

#9 | 2021-01-07
US20210005723A1
Electricity

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

#10 | 2017-09-14
US20170259298A1
Performing operations; transporting

Selective formation of metal silicides

#11 | 2016-12-22
US20160372543A1
Electricity

Metal selenide and metal telluride thin films for semiconductor device applications

#12 | 2016-12-22
US20160372365A1
Electricity

Method for forming metal chalcogenide thin films on a semiconductor device

#13 | 2014-01-30
US20140027884A1
Electricity

System and method for gas-phase sulfur passivation of a semiconductor surface

InventorID:

628011 ⎘