Osan-si
South Korea
12
2014-06-26
The entities that hold a legal rights for patent applications filed by inventor Joo Dae-Kwon:
Dae-Kwon Joo from Osan-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor device having a high-K gate dielectric layer
#2 | 2014-05-22Method of fabricating semiconductor device
#3 | 2014-05-08SEMICONDUCTOR DEVICES EMPLOYING HIGH-K DIELECTRIC LAYERS AS A GATE INSULATING LAYER
#4 | 2014-02-06Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
#5 | 2012-05-24Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the same
#6 | 2012-05-24Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby
#7 | 2012-04-05Method of patterning a semiconductor device with hard mask
#8 | 2012-03-22Methods of forming gate structure and methods of manufacturing semiconductor device including the same
#9 | 2012-02-09Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
#10 | 2011-12-15Method of fabricating semiconductor device
#11 | 2011-12-15METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH DIFFERENTIALLY NITRIDED GATE INSULATORS
#12 | 2011-07-21Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the same
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