Inventor profile of:

Andreas Sattler

City:

Trostberg

Country:

Germany

Published Applications:

15

Last publication date:

2025-09-11

Top Assignees for applications by Andreas Sattler

The entities that hold a legal rights for patent applications filed by inventor Sattler Andreas:

Recent patent applications by Sattler Andreas

Andreas Sattler from Trostberg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-09-11
US20250283249A1
Chemistry; metallurgy

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF

#2 | 2024-12-05
US20240401233A1
Chemistry; metallurgy

PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON

#3 | 2023-07-27
US20230235479A1
Chemistry; metallurgy

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF

#4 | 2022-11-03
US20220349089A1
Chemistry; metallurgy

Method for producing a semiconductor wafer composed of monocrystalline silicon

#5 | 2022-10-13
US20220328636A1
Electricity

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

#6 | 2020-08-06
US20200248333A1
Chemistry; metallurgy

SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

#7 | 2020-07-30
US20200240039A1
Chemistry; metallurgy

Semiconductor wafer composed of single-crystal silicon with high gate oxide breakdown, and a process for the manufacture thereof

#8 | 2020-05-28
US20200168712A1
Electricity

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

#9 | 2020-05-28
US20200165745A1
Chemistry; metallurgy

Semiconductor wafer made of single-crystal silicon and process for the production thereof

#10 | 2016-02-25
US20160053405A1
Chemistry; metallurgy

Semiconductor Wafer Composed Of Monocrystalline Silicon And Method For Producing It

#11 | 2014-02-13
US20140044945A1
Chemistry; metallurgy

Semiconductor wafer composed of monocrystalline silicon and method for producing it

#12 | 2012-12-13
US20120315428A1
Chemistry; metallurgy

Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm

#13 | 2011-12-29
US20110316128A1
Chemistry; metallurgy

Semiconductor wafers of silicon and method for their production

#14 | 2011-07-21
US20110175202A1
Chemistry; metallurgy

Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm

#15 | 2008-08-07
US20080187736A1
Chemistry; metallurgy

Semiconductor wafers of silicon and method for their production

InventorID:

650219 ⎘