Inventor profile of:

Byung Soo Eun

City:

Seoul

Country:

South Korea

Published Applications:

33

Last publication date:

2014-02-13

Top Assignees for applications by Byung Soo Eun

The entities that hold a legal rights for patent applications filed by inventor Eun Byung Soo:

Recent patent applications by Eun Byung Soo

Byung Soo Eun from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-02-13
US20140045325A1
Electricity

Method for fabricating an inter dielectric layer in semiconductor device

#2 | 2012-10-25
US20120270380A1
Electricity

METHOD FOR FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

#3 | 2011-10-20
US20110256696A1
Electricity

Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the same

#4 | 2011-06-02
US20110127634A1
Electricity

Isolation structure in a memory device

#5 | 2011-03-17
US20110065251A1
Electricity

Method for fabricating storage node electrode in semiconductor device

#6 | 2010-12-30
US20100330804A1
Electricity

Method for fabricating bitline in semiconductor device

#7 | 2010-07-01
US20100167539A1
Electricity

Method for insulating wires of semiconductor device

#8 | 2010-06-24
US20100159700A1
Electricity

Method for fabricating cylinder type capacitor

#9 | 2010-05-20
US20100124807A1
Electricity

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING STEP GATES

#10 | 2010-04-01
US20100078757A1
Electricity

Semiconductor device having recess gate and isolation structure and method for fabricating the same

#11 | 2010-03-04
US20100052097A1
Electricity

Capacitor of semiconductor device and method for forming the same

#12 | 2009-10-29
US20090267197A1
Electricity

Semiconductor device for preventing the leaning of storage nodes

#13 | 2009-10-15
US20090256233A1
Electricity

Isolation structure in memory device and method for fabricating the isolation structure

#14 | 2009-10-01
US20090243050A1
Electricity

Isolation structure in memory device and method for fabricating the same

#15 | 2009-05-21
US20090127650A1
Electricity

Trench isolation structure in a semiconductor device and method for fabricating the same

#16 | 2009-03-12
US20090068817A1
Electricity

Method for forming isolation layer in semiconductor device

#17 | 2009-03-12
US20090068816A1
Electricity

Method for forming isolation layer in semiconductor device

#18 | 2009-01-01
US20090004849A1
Electricity

Method for fabricating an inter dielectric layer in semiconductor device

#19 | 2009-01-01
US20090004839A1
Electricity

METHOD FOR FABRICATING AN INTERLAYER DIELECTRIC IN A SEMICONDUCTOR DEVICE

#20 | 2008-12-25
US20080318407A1
Electricity

Method for forming storage electrode of semiconductor memory device

#21 | 2008-12-25
US20080318402A1
Electricity

Semiconductor device having a recess channel and method for fabricating the same

#22 | 2008-10-16
US20080254593A1
Electricity

Method for Fabricating Isolation Layer in Semiconductor Device

#23 | 2008-07-03
US20080160745A1
Electricity

Method for fabricating a dual poly gate in semiconductor device

#24 | 2008-07-03
US20080160721A1
Electricity

Method for fabricating isolation film in semiconductor device

#25 | 2008-03-20
US20080067685A1
Electricity

Semiconductor Device Manufacturing Method

#26 | 2008-01-31
US20080026571A1
Electricity

Bit line barrier metal layer for semiconductor device and process for preparing the same

#27 | 2008-01-03
US20080003766A1
Electricity

Method for manufacturing semiconductor device free from layer-lifting between insulating layers

#28 | 2007-10-04
US20070232021A1
Electricity

Method for forming isolation layer in semiconductor device

#29 | 2007-02-01
US20070026616A1
Electricity

Method for fabricating semiconductor device and semiconductor device fabricated using the same

#30 | 2006-11-23
US20060264003A1
Electricity

Trench isolation structure in a semiconductor device and method for fabricating the same

#31 | 2006-10-26
US20060237783A1
Electricity

Semiconductor device having a recess channel and method for fabricating the same

#32 | 2006-10-05
US20060220111A1
Electricity

Semiconductor device having step gates and method of manufacturing the same

#33 | 2006-06-08
US20060118954A1
Electricity

Bit line barrier metal layer for semiconductor device and process for preparing the same

InventorID:

650740 ⎘