Inventor profile of:

Nigel Chan

City:

Dresden

Country:

Germany

Published Applications:

29

Last publication date:

2024-11-07

Top Assignees for applications by Nigel Chan

The entities that hold a legal rights for patent applications filed by inventor Chan Nigel:

Recent patent applications by Chan Nigel

Nigel Chan from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-07
US20240371879A1
Electricity

IC STRUCTURE FOR CONNECTED CAPACITANCES AND METHOD OF FORMING SAME

#2 | 2024-08-22
US20240282776A1
Electricity

SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION

#3 | 2023-05-25
US20230163134A1
Electricity

Semiconductor structure including sectioned well region

#4 | 2022-09-29
US20220310629A1
Electricity

Eight-transistor static random access memory cell

#5 | 2021-03-18
US20210083095A1
Electricity

Extended-drain field-effect transistors including a floating gate

#6 | 2020-10-29
US20200343248A1
Electricity

IC product with a novel bit cell design and a memory array comprising such bit cells

#7 | 2020-03-12
US20200083223A1
Electricity

Deep fence isolation for logic cells

#8 | 2020-02-27
US20200066573A1
Electricity

Dual-depth STI cavity extension and method of production thereof

#9 | 2019-10-17
US20190319048A1
Electricity

High-voltage transistor device with thick gate insulation layers

#10 | 2019-10-10
US20190312038A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUND CONNECTION VIA BACK GATE

#11 | 2019-08-27
US15944910
Electricity

Semiconductor devices including self-aligned active regions for planar transistor architecture

#12 | 2019-06-06
US20190172832A1
Electricity

FinFET SRAM layout and method of making the same

#13 | 2019-02-07
US20190042689A1
Physics

Alignment key design rule check for correct placement of abutting cells in an integrated circuit

#14 | 2019-01-31
US20190035815A1
Electricity

High-voltage transistor device with thick gate insulation layers

#15 | 2019-01-17
US20190019876A1
Electricity

High voltage transistor using buried insulating layer as gate dielectric

#16 | 2019-01-08
US15895053
Electricity

SOI-based floating gate memory cell

#17 | 2017-12-19
US15344856
Electricity

Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereof

#18 | 2017-12-14
US20170359070A1
Electricity

Semiconductor structure with back-gate switching

#19 | 2017-11-30
US20170345914A1
Electricity

Methods for forming integrated circuits that include a dummy gate structure

#20 | 2017-10-17
US15163806
Electricity

Integrated circuit including a dummy gate structure and method for the formation thereof

#21 | 2017-09-21
US20170271220A1
Electricity

Inline monitoring of transistor-to-transistor critical dimension

#22 | 2017-09-12
US15182068
Electricity

Semiconductor structure with back-gate switching

#23 | 2017-06-20
US15055954
Electricity

Process monitoring for gate cut mask

#24 | 2017-03-16
US20170077314A1
Electricity

Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

#25 | 2016-11-24
US20160343428A1
Physics

Device comprising a plurality of FDSOI static random-access memory bitcells and method of operation thereof

#26 | 2014-12-18
US20140367794A1
Electricity

Device including an array of memory cells and well contact areas, and method for the formation thereof

#27 | 2014-02-20
US20140050033A1
Physics

Memory cell assembly including an avoid disturb cell

#28 | 2014-02-20
US20140050017A1
Physics

Device comprising a plurality of static random access memory cells and method of operation thereof

#29 | 2012-07-05
US20120170386A1
Physics

Hybrid read scheme for multi-level data

InventorID:

656925 ⎘