Mahmut Sami Kavrik

METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES

TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN TRANSFER PROTECTIVE LAYER

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL MATERIALS

TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND METHOD TO PROVIDE SAME

DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING DIFFUSION BONDING LAYERS

BACKSIDE POWER GATING

ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATERIALS FOR USE IN FIELD EFFECT TRANSISTOR DEVICES

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD SOURCE AND DRAIN

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION

BEOL CONTACT METALS FOR 2D TRANSISTORS

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

FABRICATION OF NOVEL DEVICES USING ION BEAMS

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS

ION BEAM LITHOGRAPHY AND NANOENGINEERING