Wolfgang Werner

Field-effect semiconductor device having a heterojunction contact

Method of manufacturing a semiconductor structure and semiconductor device

Method for Manufacturing a Semiconductor Substrate

Compound gated semiconductor device having semiconductor field plate

MEMS device and method for manufacturing a MEMS device

Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench

Field-effect semiconductor device

MEMS device

Semiconductor device, junction field effect transistor and vertical field effect transistor

Heterojunction semiconductor device and manufacturing method

Heterojunction Transistor and Manufacturing Method Therefor

Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate

Field-effect semiconductor device and manufacturing method therefor

Method for producing a semiconductor

Normally-off semiconductor switches and normally-off JFETs

Integrated circuit technology with different device epitaxial layers

Transistor component with reduced short-circuit current

Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor

Semiconductor component with dielectric layer stack and voltage divider

Semiconductor device

Method for producing a semiconductor

Electronic circuit for controlling a power field effect transistor

Semiconductor component with Schottky zones in a drift zone

Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same

Semiconductor device

Integrated circuit using a superjunction semiconductor device

Vertical trench transistor