Zichron-Yaakov
Israel
13
2020-12-03
The entities that hold a legal rights for patent applications filed by inventor Levy Sagy:
Sagy Levy from Zichron-Yaakov, IL has applied for patents for these inventions. The list has both pending applications and granted patents:
Lateral diffused metal oxide semiconductor field effect (LDMOS) transistor and device having LDMOS transistors
#2 | 2020-09-10RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE
#3 | 2019-10-17NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN A MULTI-LAYER CHARGE-TRAPPING REGION
#4 | 2018-12-20Oxide-nitride-oxide stack having multiple oxynitride layers
#5 | 2018-12-20Oxide-nitride-oxide stack having multiple oxynitride layers
#6 | 2017-12-07Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
#7 | 2017-11-07LDMOS device having a low angle sloped oxide
#8 | 2017-01-19Semiconductor die with a metal via
#9 | 2016-12-22Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
#10 | 2015-10-01Double-Resurf LDMOS With Drift And PSURF Implants Self-Aligned To A Stacked Gate "BUMP" Structure
#11 | 2015-08-11Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared mask
#12 | 2014-03-13Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
#13 | 2011-03-01Trapped-charge non-volatile memory with uniform multilevel programming
683049 ⎘