Assignee profile:

LONGITUDE FLASH MEMORY SOLUTIONS LTD.

City:

Dublin

Country:

Ireland

Published Applications:

38

Last publication date:

2023-06-29

Patent Grants:

38

Last grant date:

2024-07-23

Top Inventors for applications by LONGITUDE FLASH MEMORY SOLUTIONS LTD.

These are the the leading inventors for applications assigned to LONGITUDE FLASH MEMORY SOLUTIONS LTD.:

Recent patent applications by LONGITUDE FLASH MEMORY SOLUTIONS LTD.

LONGITUDE FLASH MEMORY SOLUTIONS LTD. based in Dublin, IE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-06-29 ✅ Patent 12,048,162 granted on 2024-07-23
US20230209830A1
Electricity

Method of ono integration into logic CMOS flow

#2 | 2023-06-22 ✅ Patent 12,014,800 granted on 2024-06-18
US20230197128A1
Physics

Low standby power with fast turn on method for non-volatile memory devices

#3 | 2023-01-26 ✅ Patent 12,009,401 granted on 2024-06-11
US20230023852A1
Electricity

Memory transistor with multiple charge storing layers and a high work function gate electrode

#4 | 2023-01-19 ✅ Patent 12,266,521 granted on 2025-04-01
US20230017648A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#5 | 2022-06-02 ✅ Patent 11,950,412 granted on 2024-04-02
US20220173116A1
Electricity

Gate fringing effect based channel formation for semiconductor device

#6 | 2022-03-24 ✅ Patent 11,784,243 granted on 2023-10-10
US20220093773A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#7 | 2022-01-06 ✅ Patent 11,721,733 granted on 2023-08-08
US20220005929A1
Electricity

Memory transistor with multiple charge storing layers and a high work function gate electrode

#8 | 2021-07-15 ✅ Patent 11,456,365 granted on 2022-09-27
US20210217862A1
Electricity

Memory transistor with multiple charge storing layers and a high work function gate electrode

#9 | 2021-06-24 ✅ Patent 11,569,254 granted on 2023-01-31
US20210188629A1
Performing operations; transporting

Method of ono integration into logic CMOS flow

#10 | 2021-03-11 ✅ Patent 11,257,912 granted on 2022-02-22
US20210074822A1
Electricity

Sonos stack with split nitride memory layer

#11 | 2020-12-24 ✅ Patent 11,361,826 granted on 2022-06-14
US20200402588A1
Physics

Asymmetric pass field-effect transistor for nonvolatile memory

#12 | 2020-09-24 ✅ Patent 12,464,780 granted on 2025-11-04
US20200303563A1
Electricity

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONSTANT BLOCKING REGION

#13 | 2020-07-23 ✅ Patent 10,998,019 granted on 2021-05-04
US20200234746A1
Physics

Low standby power with fast turn on method for non-volatile memory devices

#14 | 2020-06-30 ✅ Patent 10,700,083 granted on 2020-06-30
US14824051
Electricity

Method of ONO integration into logic CMOS flow

#15 | 2020-05-14 ✅ Patent 11,056,565 granted on 2021-07-06
US20200152752A1
Electricity

Flash memory device and method

#16 | 2020-05-07 ✅ Patent 11,222,965 granted on 2022-01-11
US20200144399A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#17 | 2020-01-16 ✅ Patent 10,854,625 granted on 2020-12-01
US20200020710A1
Electricity

Method of integrating a charge-trapping gate stack into a CMOS flow

#18 | 2020-01-16 ✅ Patent 10,706,937 granted on 2020-07-07
US20200020402A1
Physics

Asymmetric pass field-effect transistor for non-volatile memory

#19 | 2020-01-09 ✅ Patent 10,903,325 granted on 2021-01-26
US20200013863A1
Electricity

Memory transistor with multiple charge storing layers and a high work function gate electrode

#20 | 2019-12-05 ✅ Patent 11,641,745 granted on 2023-05-02
US20190371806A1
Electricity

Embedded sonos with a high-K metal gate and manufacturing methods of the same

#21 | 2019-10-17 ✅ Patent 11,251,189 granted on 2022-02-15
US20190319035A1
Electricity

Gate fringing effect based channel formation for semiconductor device

#22 | 2019-06-27 ✅ Patent 10,790,364 granted on 2020-09-29
US20190198329A1
Electricity

SONOS stack with split nitride memory layer

#23 | 2019-05-23 ✅ Patent 10,418,373 granted on 2019-09-17
US20190157286A1
Electricity

Method of ONO stack formation

#24 | 2019-05-16 ✅ Patent 10,332,599 granted on 2019-06-25
US20190147960A1
Physics

Bias scheme for word programming in non-volatile memory and inhibit disturb reduction

#25 | 2019-03-21 ✅ Patent 10,784,356 granted on 2020-09-22
US20190088487A1
Electricity

Embedded sonos with triple gate oxide and manufacturing method of the same

#26 | 2019-03-14 ✅ Patent 10,510,387 granted on 2019-12-17
US20190080732A1
Physics

Low standby power with fast turn on method for non-volatile memory devices

#27 | 2019-02-28 ✅ Patent 10,424,592 granted on 2019-09-24
US20190067313A1
Electricity

Method of integrating a charge-trapping gate stack into a CMOS flow

#28 | 2018-12-20 ✅ Patent 10,896,973 granted on 2021-01-19
US20180366564A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#29 | 2018-12-20 ✅ Patent 10,903,342 granted on 2021-01-26
US20180366563A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#30 | 2018-12-13 ✅ Patent 10,418,110 granted on 2019-09-17
US20180358097A1
Physics

Asymmetric pass field-effect transistor for nonvolatile memory

#31 | 2018-12-06 ✅ Patent 10,593,812 granted on 2020-03-17
US20180351004A1
Electricity

Radical oxidation process for fabricating a nonvolatile charge trap memory device

#32 | 2018-12-06 ✅ Patent 10,699,901 granted on 2020-06-30
US20180351003A1
Electricity

SONOS ONO stack scaling

#33 | 2018-06-14 ✅ Patent 10,784,277 granted on 2020-09-22
US20180166452A1
Electricity

Integration of a memory transistor into High-k, metal gate CMOS process flow

#34 | 2017-12-21 ✅ Patent 10,373,688 granted on 2019-08-06
US20170365346A1
Physics

High voltage architecture for non-volatile memory

#35 | 2017-06-29 ✅ Patent 10,411,103 granted on 2019-09-10
US20170186883A1
Electricity

Memory transistor with multiple charge storing layers and a high work function gate electrode

#36 | 2017-03-30 ✅ Patent 10,615,289 granted on 2020-04-07
US20170092781A1
Electricity

Nonvolatile charge trap memory device having a high dielectric constant blocking region

#37 | 2016-10-20 ✅ Patent 10,374,067 granted on 2019-08-06
US20160308033A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

#38 | 2016-10-13 ✅ Patent 10,903,068 granted on 2021-01-26
US20160300724A1
Electricity

Oxide-nitride-oxide stack having multiple oxynitride layers

Also check out LONGITUDE FLASH MEMORY SOLUTIONS LTD's (Dublin, Ireland) applicant profile with 39 patent applications submitted.

AssigneeID:

356784 ⎘