Qingyun Yang

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

Last publication date:

2018-12-13

Top Assignees for applications by Qingyun Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Qingyun:

Qingyun Yang from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Process for patterning a magnetic tunnel junction

Method of replacement source/drain for 3D CMOS transistors

Method of removing high-K dielectric layer on sidewalls of gate structure

Gate patterning of nano-channel devices

Gate patterning of nano-channel devices

Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET

METHOD AND SYSTEM FOR PLASMA ETCHING HAVING IMPROVED ACROSS-WAFER ETCH UNIFORMITY

METHOD OF FORMING DISPOSABLE SPACERS FOR IMPROVED STRESSED NITRIDE FILM EFFECTIVENESS

InventorID:

683051 ⎘