Dresden
Germany
30
2024-03-14
The entities that hold a legal rights for patent applications filed by inventor Yan Ran:
Ran Yan from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
SYSTEM FOR CONTROLLING THE BRIGHTNESS OF A DISPLAY
#2 | 2018-12-20LATERALLY DIFFUSED FIELD EFFECT TRANSISTOR IN SOI CONFIGURATION
#3 | 2017-11-02Method of forming a capacitor structure and capacitor structure
#4 | 2017-10-26FinFET device with enlarged channel regions
#5 | 2017-08-31FinFET device with enlarged channel regions
#6 | 2017-05-25Memory device structure
#7 | 2017-04-27Method of forming a memory device structure and memory device structure
#8 | 2017-03-09Method of forming a semiconductor device with STI structures on an SOI substrate
#9 | 2016-10-13Complex semiconductor devices of the SOI type
#10 | 2016-07-14Methods for fabricating integrated circuits with improved implantation processes
#11 | 2016-04-26Method of forming a semiconductor device and resulting semiconductor devices
#12 | 2016-04-07OPC enlarged dummy electrode to eliminate ski slope at eSiGe
#13 | 2015-10-08Integrated circuits and methods of fabrication thereof
#14 | 2015-10-08Methods for fabricating integrated circuits with improved implantation processes
#15 | 2015-08-27Method for a uniform compressive strain layer and device thereof
#16 | 2015-07-02METHODS FOR FABRICATING MULTIPLE-GATE INTEGRATED CIRCUITS
#17 | 2015-06-11SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR HAVING A LOW DOPED DRIFT REGION AND METHOD FOR THE FORMATION THEREOF
#18 | 2015-05-28Integrated circuits with shallow trench isolations, and methods for producing the same
#19 | 2015-03-19INTEGRATED CIRCUITS WITH A CORRUGATED GATE, AND METHODS FOR PRODUCING THE SAME
#20 | 2015-01-22Gate oxide quality for complex MOSFET devices
#21 | 2015-01-15Channel semiconductor alloy layer growth adjusted by impurity ion implantation
#22 | 2014-12-11Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure
#23 | 2014-12-04Methods for fabricating integrated circuits with the implantation of fluorine
#24 | 2014-11-20Methods for fabricating integrated circuits with the implantation of nitrogen
#25 | 2014-09-18METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE ELECTRODE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND ACCORDING SEMICONDUCTOR DEVICE STRUCTURE
#26 | 2014-09-18FLUORINE-DOPED CHANNEL SILICON-GERMANIUM LAYER
#27 | 2014-09-18Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment
#28 | 2014-09-11METHODS FOR FORMING INTEGRATED CIRCUIT SYSTEMS EMPLOYING FLUORINE DOPING
#29 | 2014-07-17Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts
#30 | 2014-04-17OXYGEN FREE RTA ON GATE FIRST HKMG STACKS
724404 ⎘