Inventor profile of:

Minhee Cho

City:

Suwon-si

Country:

South Korea

Published Applications:

28

Last publication date:

2026-02-12

Top Assignees for applications by Minhee Cho

The entities that hold a legal rights for patent applications filed by inventor Cho Minhee:

Recent patent applications by Cho Minhee

Minhee Cho from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-02-12
US20260047132A1
Electricity

SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES AND METHODS OF FABRICATING THE SAME

#2 | 2025-08-07
US20250255008A1
Electricity

PROTECTION DIODE AND SEMICONDUCTOR DEVICE HAVING THE SAME

#3 | 2025-02-20
US20250063727A1
Electricity

SEMICONDUCTOR DEVICE

#4 | 2024-09-26
US20240324177A1
Electricity

SEMICONDUCTOR DEVICE

#5 | 2024-09-26
US20240322048A1
Electricity

INTERGRATED CIRCUIT DEVICES

#6 | 2024-08-15
US20240276703A1
Electricity

SEMICONDUCTOR MEMORY DEVICES

#7 | 2024-07-25
US20240250169A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN

#8 | 2024-07-04
US20240224494A1
Electricity

SEMICONDUCTOR MEMORY DEVICE

#9 | 2024-05-23
US20240170578A1
Electricity

SEMICONDUCTOR DEVICE

#10 | 2024-02-29
US20240074157A1
Electricity

SEMICONDUCTOR DEVICES

#11 | 2024-01-25
US20240030342A1
Electricity

SEMICONDUCTOR DEVICES

#12 | 2023-09-14
US20230292490A1
Electricity

SEMICONDUCTOR MEMORY DEVICE

#13 | 2023-08-24
US20230269933A1
Electricity

TRANSISTOR STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME

#14 | 2023-01-19
US20230021071A1
Physics

Memory device having volatile and non-volatile memory cells

#15 | 2023-01-12
US20230009575A1
Electricity

Semiconductor device

#16 | 2022-12-01
US20220384661A1
Electricity

SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES AND METHODS OF FABRICATING THE SAME

#17 | 2022-10-13
US20220328492A1
Electricity

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

#18 | 2022-06-23
US20220199621A1
Electricity

Semiconductor memory device

#19 | 2022-01-27
US20220028859A1
Electricity

Memory device having a channel provided on a memory unit

#20 | 2021-09-09
US20210280230A1
Physics

Memory device

#21 | 2021-07-15
US20210217897A1
Electricity

Semiconductor device

#22 | 2021-05-27
US20210159340A1
Electricity

Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof

#23 | 2021-05-27
US20210159231A1
Electricity

Semiconductor memory device and method of manufacturing the same

#24 | 2021-02-25
US20210057417A1
Electricity

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

#25 | 2020-12-10
US20200388313A1
Physics

Memory device

#26 | 2020-11-19
US20200365733A1
Electricity

Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof

#27 | 2015-08-20
US20150236084A1
Electricity

Semiconductor devices having hybrid capacitors and methods for fabricating the same

#28 | 2014-04-24
US20140110824A1
Electricity

Semiconductor devices having hybrid capacitors and methods for fabricating the same

InventorID:

733675 ⎘