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Inventor profile of:

Tetsuo ENDOH

City:

Sendai

Country:

Japan

Published Applications:

48

Last publication date:

2024-02-29

Top Assignees for applications by Tetsuo ENDOH

The entities that hold a legal rights for patent applications filed by inventor ENDOH Tetsuo:

TOHOKU UNIVERSITY 25 Sendai, Japan
TOHOKU UNIVERSITY 22 Sendai-shi, Japan
TOHOKU UNIVERSITY 17 Sendai-shi, Miyagi, Japan
TOHOKU UNIVERSITY 4 Miyagi, Japan
TOKYO ELECTRON LIMITED 3 Tokyo, Japan
SK hynix, Inc. 2 Icheon, South Korea
Sharp Semiconductor Innovation Corporation 2 Tenri, Japan
SK HYNIX INC. 1 Gyeonggi-do, South Korea
Tokyo Electron Limited 1 , Japan
Tohoku University 1 , Japan
Tohoku University 1 Sendai-shi, Miyagi, -
GLOBALWAFERS JAPAN CO., LTD. 1 Niigata, Japan
TANAKA KIKINZOKU KOGYO K.K. 1 Tokyo, Japan
TANAKA KIKIZOKU KOGYO K.K. 1 Tokyo, Japan
TOHOKU UNIVERSITY 1 Miyagi-ken, Japan
GlobalWafers Japan Co., Ltd. 1 Kitakanbara-gun, Japan

Recent patent applications by ENDOH Tetsuo

Tetsuo ENDOH from Sendai, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-02-29

US20240071452A1

Device, sensor node, access controller, data transfer method, and processing method in microcontroller

#2 | 2023-12-21

US20230407459A1

Chemistry; metallurgy

PLATINUM-BASED SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME

#3 | 2023-06-01

US20230170334A1

POWER SEMICONDUCTOR DEVICE AND POWER SEMICONDUCTOR MODULE

#4 | 2023-05-11

US20230147268A1

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

#5 | 2023-03-16

US20230084986A1

Semiconductor circuit and support device for logic circuit design

#6 | 2023-01-26

US20230028652A1

Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system

#7 | 2022-12-22

US20220406366A1

STORAGE CIRCUIT PROVIDED WITH VARIABLE RESISTANCE TYPE ELEMENTS

#8 | 2022-06-02

US20220172761A1

Storage circuit provided with variable resistance type elements, and its test device

#9 | 2022-05-19

US20220157361A1

Device, sensor node, access controller, data transfer method, and processing method in microcontroller

#10 | 2022-03-31

US20220101939A1

Memory device with pipelined access

#11 | 2022-03-31

US20220101916A1

Memory device

#12 | 2022-03-24

US20220093396A1

Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate

#13 | 2021-12-23

US20210399208A1

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATION METHOD FOR SAID MAGNETORESISTANCE EFFECT ELEMENT

#14 | 2021-05-06

US20210135094A1

Magnetoresistive element and magnetic memory

#15 | 2021-03-11

US20210074910A1

Magnetoresistive effect element and magnetic memory

#16 | 2020-12-03

US20200381032A1

Storage circuit provided with variable resistance elements, reference voltage circuit and sense amplifier

#17 | 2020-10-29

US20200343442A1

Magnetoresistance effect element and magnetic memory

#18 | 2020-09-10

US20200286536A1

Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same

#19 | 2020-07-02

US20200211611A1

Data writing device for variable-resistance memory element and non-volatile flip-flop

#20 | 2020-03-19

US20200090719A1

Magnetoresistance effect element and magnetic memory

#21 | 2020-02-06

US20200044142A1

Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element

#22 | 2019-10-03

US20190304526A1

Magnetic tunnel junction element and magnetic memory

#23 | 2019-08-08

US20190243929A1

System, method, and non-transitory computer readable recording medium storing a program recorded thereon for supporting a design of a circuit including a stochastic operation element

#24 | 2019-07-25

US20190229262A1

Method of manufacturing magnetic tunnel coupling element

#25 | 2019-07-18

US20190219633A1

Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit

#26 | 2019-06-20

US20190189917A1

Magnetic tunnel junction element and method for manufacturing same

#27 | 2019-03-07

US20190074433A1

Magnetoresistance effect element and magnetic memory

#28 | 2019-01-17

US20190019944A1

Magnetic tunnel junction element and magnetic memory

#29 | 2018-12-06

US20180350419A1

Memory circuit provided with variable-resistance element

#30 | 2018-10-18

US20180301621A1

Spintronics element

#31 | 2018-06-21

US20180175286A1

Magnetoresistance effect element and magnetic memory

#32 | 2018-04-19

US20180108390A1

Magnetoresistance effect element and magnetic memory device

#33 | 2018-01-18

US20180019388A1

Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit

#34 | 2017-12-21

US20170365338A1

Data-write device for resistance-change memory element

#35 | 2017-11-09

US20170324030A1

Magnetoresistance effect element and magnetic memory

#36 | 2017-08-03

US20170222135A1

Magnetoresistance effect element and magnetic memory device

#37 | 2016-12-22

US20160372174A1

Semiconductor storage device using STT-MRAM

#38 | 2016-08-04

US20160225428A1

Nonvolatile variable resistance memory circuit which includes magnetic tunnel junction element

#39 | 2016-08-04

US20160224082A1

Memory cell and storage device

#40 | 2016-04-14

US20160104714A1

Semiconductor integrated circuit and method of producing the same

#41 | 2015-11-19

US20150332745A1

Storage device, memory cell, and data writing method

#42 | 2015-07-09

US20150194437A1

Semiconductor device and method of manufacturing the same

#43 | 2014-12-04

US20140355330A1

Integrated circuit

#44 | 2014-05-15

US20140131785A1

Semiconductor device and method of manufacturing the same

#45 | 2013-05-16

US20130119452A1

Semiconductor integrated circuit and method of producing the same

#46 | 2011-04-14

US20110086485A1

Forming a MOS memory device having a dielectric film laminate as a charge accumulation region

#47 | 2010-11-11

US20100283097A1

MOS semiconductor memory device having charge storage region formed from stack of insulating films

#48 | 2010-05-27

US20100130011A1

Semiconductor device fabrication method

InventorID:

759311 ⎘