Inventor profile of:

Chun CHEN

City:

San Jose, California

Country:

United States

Published Applications:

62

Last publication date:

2024-06-20

Top Assignees for applications by Chun CHEN

The entities that hold a legal rights for patent applications filed by inventor CHEN Chun:

Recent patent applications by CHEN Chun

Chun CHEN from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-06-20
US20240206183A1
Electricity

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF FABRICATION THEREOF

#2 | 2024-01-04
US20240008279A1
Electricity

Method of forming high-voltage transistor with thin gate poly

#3 | 2021-09-23
US20210296343A1
Electricity

Method of forming high-voltage transistor with thin gate poly

#4 | 2021-05-06
US20210134811A1
Electricity

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

#5 | 2021-04-08
US20210104533A1
Electricity

Split gate charge trapping memory cells having different select gate and memory gate heights

#6 | 2021-03-25
US20210091198A1
Electricity

Memory first process flow and device

#7 | 2020-09-24
US20200303023A1
Physics

Suppression of program disturb with bit line and select gate voltage regulation

#8 | 2019-12-19
US20190386109A1
Electricity

Memory first process flow and device

#9 | 2019-10-03
US20190304990A1
Electricity

Method of Forming High-Voltage Transistor with Thin Gate Poly

#10 | 2019-09-12
US20190279729A1
Physics

Suppression of program disturb with bit line and select gate voltage regulation

#11 | 2019-06-27
US20190198328A1
Electricity

Multi-layer inter-gate dielectric structure and method of manufacturing thereof

#12 | 2019-06-27
US20190198124A1
Physics

Non-volatile memory array with memory gate line and source line scrambling

#13 | 2019-01-24
US20190027487A1
Electricity

Method of forming high-voltage transistor with thin gate poly

#14 | 2019-01-24
US20190027484A1
Electricity

Embedded non-volatile memory device and fabrication method of the same

#15 | 2018-12-20
US20180366551A1
Electricity

Memory first process flow and device

#16 | 2018-12-13
US20180358367A1
Electricity

Split-gate semiconductor device with L-shaped gate

#17 | 2018-11-27
US15060249
Electricity

Three dimensional capacitor

#18 | 2018-11-08
US20180323314A1
Electricity

Charge trapping split gate device and method of fabricating same

#19 | 2018-09-13
US20180261295A1
Physics

Non-volatile memory array with memory gate line and source line scrambling

#20 | 2018-07-05
US20180190361A1
Physics

Suppression of program disturb with bit line and select gate voltage regulation

#21 | 2018-06-14
US20180166458A1
Electricity

Split-gate flash cell formed on recessed substrate

#22 | 2018-06-14
US20180166141A1
Physics

Non-volatile memory array with memory gate line and source line scrambling

#23 | 2018-01-30
US15496993
Physics

Suppression of program disturb with bit line and select gate voltage regulation

#24 | 2017-12-26
US15473372
Electricity

Split-gate flash cell formed on recessed substrate

#25 | 2017-09-14
US20170263459A1
Electricity

Multi-layer inter-gate dielectric structure and method of manufacturing thereof

#26 | 2017-07-06
US20170194343A1
Electricity

Split gate charge trapping memory cells having different select gate and memory gate heights

#27 | 2017-06-08
US20170162586A1
Electricity

Split-gate semiconductor device with L-shaped gate

#28 | 2017-05-18
US20170141201A1
Electricity

Memory first process flow and device

#29 | 2016-10-20
US20160307916A1
Electricity

Three-dimensional charge trapping NAND cell with discrete charge trapping film

#30 | 2016-10-06
US20160293720A1
Electricity

Memory first process flow and device

#31 | 2016-07-28
US20160218227A1
Electricity

Gate Formation Memory by Planarization

#32 | 2016-07-28
US20160218113A1
Electricity

Integrated Circuits with Non-Volatile Memory and Methods for Manufacture

#33 | 2016-04-21
US20160111292A1
Electricity

Charge trapping split gate embedded flash memory and associated methods

#34 | 2016-02-04
US20160035576A1
Electricity

Split-gate semiconductor device with L-shaped gate

#35 | 2015-10-08
US20150287812A1
Electricity

Use disposable gate cap to form transistors, and split gate charge trapping memory cells

#36 | 2015-07-09
US20150194537A1
Electricity

MULTI-LAYER INTER-GATE DIELECTRIC STRUCTURE

#37 | 2015-07-02
US20150187891A1
Electricity

Formation of gate sidewall structure

#38 | 2015-06-25
US20150179817A1
Electricity

Gate formation memory by planarization

#39 | 2015-06-18
US20150171100A1
Electricity

Process for forming edge wordline implants adjacent edge wordlines

#40 | 2015-04-23
US20150108562A1
Electricity

Three-dimensional charge trapping NAND cell with discrete charge trapping film

#41 | 2015-01-29
US20150031197A1
Electricity

Integrated circuits with non-volatile memory and methods for manufacture

#42 | 2014-12-18
US20140370698A1
Electricity

Non-volatile FINFET memory array and manufacturing method thereof

#43 | 2014-11-13
US20140332876A1
Electricity

HIGH VOLTAGE GATE FORMATION

#44 | 2014-06-19
US20140170843A1
Electricity

Charge trapping split gate device and method of fabricating same

#45 | 2014-06-19
US20140167220A1
Electricity

THREE DIMENSIONAL CAPACITOR

#46 | 2014-06-19
US20140167142A1
Electricity

Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells

#47 | 2014-06-19
US20140167141A1
Electricity

Charge Trapping Split Gate Embedded Flash Memory and Associated Methods

#48 | 2014-06-19
US20140167140A1
Electricity

Memory first process flow and device

#49 | 2014-06-19
US20140167139A1
Electricity

Integrated circuits with non-volatile memory and methods for manufacture

#50 | 2014-06-19
US20140167137A1
Electricity

High voltage gate formation

#51 | 2014-06-19
US20140167135A1
Electricity

Process charging protection for split gate charge trapping flash

#52 | 2014-06-19
US20140167128A1
Electricity

Memory gate landing pad made from dummy features

#53 | 2014-05-29
US20140148001A1
Electricity

Non-volatile FINFET memory device and manufacturing method thereof

#54 | 2012-07-19
US20120181601A1
Electricity

Methods for forming a memory cell having a top oxide spacer

#55 | 2012-07-19
US20120181591A1
Electricity

Non-volatile FINFET memory array and manufacturing method thereof

#56 | 2012-07-05
US20120168847A1
Electricity

Memory with extended charge trapping layer

#57 | 2012-06-07
US20120139023A1
Physics

METHOD AND APPARATUS FOR NAND MEMORY WITH RECESSED SOURCE/DRAIN REGION

#58 | 2012-03-08
US20120056260A1
Electricity

Method and device employing polysilicon scaling

#59 | 2011-09-29
US20110233647A1
Electricity

Methods for forming a memory cell having a top oxide spacer

#60 | 2011-09-15
US20110221006A1
Electricity

NAND ARRAY SOURCE/DRAIN DOPING SCHEME

#61 | 2011-09-15
US20110220981A1
Electricity

Non-volatile FINFET memory device and manufacturing method thereof

#62 | 2010-08-19
US20100207191A1
Electricity

Method and device employing polysilicon scaling

InventorID:

779022 ⎘