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Inventor profile of:

Ferdinand SCHOLZ

City:

Ulm

Country:

Germany

Published Applications:

Last publication date:

2019-09-12

Top Assignees for applications by Ferdinand SCHOLZ

The entities that hold a legal rights for patent applications filed by inventor SCHOLZ Ferdinand:

FREIBERGER COMPOUND MATERIALS GMBH 8 Freiberg, Germany
OSRAM OPTO SEMICONDUCTORS GMBH 4 Regensburg, Germany
FREIBERGER COMPOUND MATERIALS GMBH 1 Freiberg/ Sachsen, Germany
Freiberger Compound Materials GMBH 1 Freiberger, Germany
Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V. 1 Munchen, Germany
Freiberger Compund Materials GmbH 1 Freiberg, Germany

Recent patent applications by SCHOLZ Ferdinand

Ferdinand SCHOLZ from Ulm, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-09-12

US20190276950A1

Chemistry; metallurgy

Method for producing III-N templates and the reprocessing thereof and III-N template

#2 | 2015-02-19

US20150050471A1

Chemistry; metallurgy

Method for producing III-N templates and the reprocessing thereof and III-N template

#3 | 2014-06-05

US20140151716A1

Electricity

Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

#4 | 2011-09-22

US20110227198A1

Chemistry; metallurgy

Semipolar semiconductor crystal and method for manufacturing the same

#5 | 2011-01-27

US20110018106A1

Chemistry; metallurgy

Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon

#6 | 2008-08-28

US20080203409A1

Chemistry; metallurgy

PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS

#7 | 2008-07-10

US20080166522A1

Chemistry; metallurgy

Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon

#8 | 2008-04-10

US20080083910A1

Electricity

Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

#9 | 2007-07-19

US20070163490A1

Electricity

Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby

#10 | 2006-03-23

US20060060833A1

Performing operations; transporting

Radiation-emitting optoelectronic component with a quantum well structure and method for producing it

#11 | 2006-02-28

US10488489

Radiation-emitting semiconductor component and method for making same

InventorID:

783693 ⎘