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Inventor profile of:

Gunnar Leibiger

City:

Freiberg

Country:

Germany

Published Applications:

13

Last publication date:

2022-10-13

Top Assignees for applications by Gunnar Leibiger

The entities that hold a legal rights for patent applications filed by inventor Leibiger Gunnar:

Recent patent applications by Leibiger Gunnar

Gunnar Leibiger from Freiberg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-10-13
US20220325435A1
Chemistry; metallurgy

GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE

 #2 | 2020-07-23
US20200232117A1
Chemistry; metallurgy

Growth of A-B crystals without crystal lattice curvature

 #3 | 2018-03-22
US20180080143A1
Chemistry; metallurgy

Growth of A-B crystals without crystal lattice curvature

 #4 | 2014-06-05
US20140151716A1
Electricity

Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

 #5 | 2012-01-26
US20120021163A1
Chemistry; metallurgy

Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy

 #6 | 2010-01-28
US20100019352A1
Electricity

Process for smoothening III-N substrates

 #7 | 2008-09-04
US20080213543A1
Chemistry; metallurgy

Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy

 #8 | 2008-08-28
US20080203409A1
Chemistry; metallurgy

PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS

 #9 | 2008-08-28
US20080203408A1
Chemistry; metallurgy

PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS

 #10 | 2008-04-10
US20080083910A1
Electricity

Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

 #11 | 2008-01-31
US20080023800A1
Electricity

Process for smoothening III-N substrates

 #12 | 2007-11-08
US20070257334A1
Chemistry; metallurgy

Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate

 #13 | 2007-06-21
US20070141814A1
Chemistry; metallurgy

PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDING III-N SUBSTRATE
InventorID:

783696 ⎘