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Inventor profile of:

Jung Hee LEE

City:

Daegu

Country:

South Korea

Published Applications:

Last publication date:

2015-08-06

Top Assignees for applications by Jung Hee LEE

The entities that hold a legal rights for patent applications filed by inventor LEE Jung Hee:

SAMSUNG ELECTRO-MECHANICS CO., LTD. 5 Suwon, South Korea
SAMSUNG ELECTRO-MECHANICS CO., LTD. 4 Suwon Gyunggi-do, South Korea
SAMSUNG ELECTRO-MECHANICS CO., LTD. 2 Kyungki-do, South Korea
KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION 2 Daegu, South Korea
SAMSUNG ELECTRONICS CO., LTD. 2 Seoul, South Korea
SAMSUNG ELECTRONICS CO., LTD. 1 Suwon-si, South Korea
Samsung Electro-Mechanics Co., Ltd. 1 Suwon, Kyunki-Do, South Korea
SAMSUNG ELECTRO-MECHANICS., LTD. 1 Suwon, South Korea
Samsun Electronics Co., Ltd. 1 Gyeonggi-do, South Korea
Kyungpook National University Industry-Academic Cooperation 1 Sangyeok-Dong, South Korea
Samsung Electro-Mechanics Co. Ltd. 1 Suwon, Kyungki-Do, South Korea

Recent patent applications by LEE Jung Hee

Jung Hee LEE from Daegu, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-08-06

US20150221746A1

Electricity

Methods of manufacturing high electron mobility transistors

#2 | 2014-04-17

US20140103352A1

Electricity

Nitride semiconductor and fabricating method thereof

#3 | 2013-02-07

US20130034939A1

Electricity

Method of manufacturing power device

#4 | 2012-04-12

US20120088341A1

Electricity

Methods Of Manufacturing High Electron Mobility Transistors

#5 | 2012-01-12

US20120007053A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#6 | 2012-01-12

US20120007049A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#7 | 2011-09-29

US20110233623A1

Electricity

Semiconductor device and method of manufacturing the same

#8 | 2011-09-29

US20110233613A1

Electricity

Semiconductor device and method for manufacturing the same

#9 | 2011-09-29

US20110233612A1

Electricity

Semiconductor device and method of manufacturing the same

#10 | 2011-09-29

US20110233520A1

Electricity

Semiconductor device and method of manufacturing the same

#11 | 2008-06-26

US20080150086A1

Chemistry; metallurgy

Nitride based semiconductor device and process for preparing the same

#12 | 2007-06-14

US20070134834A1

Electricity

Method of manufacturing vertical gallium nitride based light emitting diode

#13 | 2006-09-28

US20060215256A1

Electricity

Gallium nitride semiconductor light emitting device and method of manufacturing the same

#14 | 2006-05-04

US20060091500A1

Chemistry; metallurgy

Nitride based semiconductor device and process for preparing the same

#15 | 2006-03-30

US20060065929A1

Electricity

Method for manufacturing a nitride based semiconductor device

#16 | 2006-01-05

US20060003556A1

Electricity

Method of growing semi-insulating GaN layer

#17 | 2005-06-30

US20050139818A1

Electricity

Gallium nitride semiconductor light emitting device and method of manufacturing the same

InventorID:

79036 ⎘