Sei-Hyung Ryu

Silicon Carbide Based Structures and Devices with Heterodoped Layer(s)

Silicon Carbide Based Structures and Devices with Heterodoped Layer(s)

METHODS OF FORMING OHMIC CONTACTS ON SEMICONDUCTOR DEVICES WITH TRENCH/MESA STRUCTURES

POWER SEMICONDUCTOR DEVICES HAVING ORTHOGONAL GATE ELECTRODES AND OHMIC LINES FOR IMPROVED ON-STATE RESISTANCE PERFORMANCE

POWER SEMICONDUCTOR DEVICES HAVING ORTHOGONAL GATE ELECTRODES AND OHMIC LINES FOR IMPROVED ON-STATE RESISTANCE PERFORMANCE

SEMICONDUCTOR DEVICES WITH LENGTH-GRADED CHANNEL

POWER SEMICONDUCTOR DEVICES INCLUDING DEEP SHIELDING REGIONS

SEMICONDUCTOR DEVICES WITH DRAIN-SOURCE CONNECTION FOR AVALANCHE BREAKDOWN

TRENCH BASED SEMICONDUCTOR DEVICES WITH EPITAXIALLY REGROWN LAYERS

POWER SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP CHANNEL REGIONS AND RELATED METHODS OF FABRICATING SAME

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SHALLOW TRENCH SHIELDS AND DEEP SUPPORT SHIELDS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SHALLOW TRENCH SHIELDS AND DEEP SUPPORT SHIELDS

TRENCH BASED SEMICONDUCTOR DEVICES WITH HETEROJUNCTION GATE

SEMICONDUCTOR DEVICES WITH GATE BUS LAYOUTS FOR HANDLING UNCLAMPED INDUCTIVE SWITCHING CURRENT

TRENCH GATE WIDE BANDGAP JUNCTION FIELD EFFECT TRANSISTORS WITH TERMINATION REGIONS HAVING PLANAR UPPER SURFACES

VERTICAL JFET SEMICONDUCTOR DEVICES WITH LOCALIZED AVALANCHE BREAKDOWN

POWER SILICON CARBIDE BASED SEMICONDUCTOR DEVICES HAVING SUPER JUNCTION DRIFT REGIONS AND METHODS OF FORMING SUCH DEVICES

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING REGIONS AND METHODS OF FORMING THE SAME

POWER SEMICONDUCTOR DEVICES INCLUDING INTEGRATED POLYSILICON DEVICES

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP TRENCH SHIELD CONNECTION PATTERNS

ENHANCED ISOLATION FOR ON-CHIP CURRENT SENSORS

GATE TRENCH POWER SEMICONDUCTOR DEVICES WITH DEEP JFET PATTERNS

MASK INTEGRATION FOR TRENCHED SEMICONDUCTOR DEVICE STRUCTURES

SPLIT SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTTKY DIODES

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING REGIONS AND SUPPORT SHIELDS THAT EXTEND TO DIFFERENT DEPTHS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING CHANNELS WITH HORIZONTAL AND VERTICAL SEGMENTS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS AND METHODS OF FABRICATING SUCH DEVICE

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SHAPED DEEP SUPPORT SHIELDS THAT REDUCE CELL PITCH AND ON-STATE RESISTANCE

Power Semiconductor Device Having Shaped Trench Ends

Power Semiconductor Device with Balancing Shunt Structure

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALLY ROUNDED UPPER AND LOWER TRENCH CORNERS AND/OR RECESSED GATE ELECTRODES AND METHODS OF FABRICATING SUCH DEVICES

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMICONDUCTOR DEVICE STRUCTURES

POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

WIDE BANDGAP SEMICONDUCTOR DEVICE WITH SENSOR ELEMENT

EDGE TERMINATION FOR POWER SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

POWER TRANSISTOR WITH SOFT RECOVERY BODY DIODE

BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES INCLUDING SEGMENTED SUPPORT SHIELD STRUCTURES FOR REDUCED ON-RESISTANCE AND RELATED FABRICATION METHODS

BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SELF-ALIGNED TRENCH SHIELDING REGIONS AND RELATED METHODS

Vertical power devices fabricated using implanted methods

METHODS OF FORMING OHMIC CONTACTS ON SEMICONDUCTOR DEVICES WITH TRENCH/MESA STRUCTURES

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED BREAKDOWN PERFORMANCE AND METHODS OF FORMING SUCH DEVICES

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING PATTERNS FORMED DURING THE WELL IMPLANT AND RELATED METHODS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD CONNECTION PATTERNS

VERTICAL POWER DEVICES HAVING MESAS AND ETCHED TRENCHES THEREBETWEEN

DYNAMIC PERFORMANCE OF ON-CHIP CURRENT SENSORS

SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES HAVING GATE RESISTORS WITH LOW VARIATION IN RESISTANCE VALUES

SEMICONDUCTOR POWER DEVICES HAVING MULTIPLE GATE TRENCHES AND METHODS OF FORMING SUCH DEVICES

Power semiconductor devices including a trenched gate and methods of forming such devices

Gate trench power semiconductor devices having improved deep shield connection patterns

Edge termination for power semiconductor devices and related fabrication methods

Vertical power devices fabricated using implanted methods

SEMICONDUCTOR DEVICES HAVING ASYMMETRIC INTEGRATED LUMPED GATE RESISTORS FOR BALANCED TURN-ON/TURN-OFF BEHAVIOR AND/OR MULTIPLE SPACED-APART LUMPED GATE RESISTORS FOR IMPROVED POWER HANDLING

Vertical semiconductor device with improved ruggedness

Trench bottom shielding methods and approaches for trenched semiconductor device structures

Semiconductor devices having gate resistors with low variation in resistance values

Power transistor with soft recovery body diode

Power transistor with soft recovery body diode

FinFET power semiconductor devices

Semiconductor power devices having multiple gate trenches and methods of forming such devices

Gate trench power semiconductor devices having improved deep shield connection patterns

SEMICONDUCTOR DEVICES INCLUDING AN OFFSET METAL TO POLYSILICON GATE CONTACT

Protection structures for semiconductor devices with sensor arrangements

PASSIVATION STRUCTURES FOR SEMICONDUCTOR DEVICES

Power semiconductor devices including angled gate trenches

Gate trench power semiconductor devices having improved deep shield connection patterns

Gate trench power semiconductor devices having improved deep shield connection patterns

Power semiconductor devices including a trenched gate and methods of forming such devices

Trench bottom shielding methods and approaches for trenched semiconductor device structures

Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices

Sidewall dopant shielding methods and approaches for trenched semiconductor device structures

SEMICONDUCTOR DIE WITH IMPROVED EDGE TERMINATION

Wide bandgap semiconductor device with sensor element

Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

Hybrid power module

Vertical semiconductor device with improved ruggedness

Power switching devices with high dV/dt capability and methods of making such devices

Wide bandgap semiconductor device

Power switching devices with DV/DT capability and methods of making such devices

Power module for supporting high current densities

Vertical FET structure

Power module having a switch module for supporting high current densities

PECVD protective layers for semiconductor devices

IGBT with bidirectional conduction

Schottky diode

Transistors with a gate insulation layer having a channel depleting interfacial charge

High power insulated gate bipolar transistors

Monolithic bidirectional silicon carbide switching devices

Vertical power transistor with built-in gate buffer

Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same

Schottky diode

JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY

Monolithic bidirectional silicon carbide switching devices

Bidirectional silicon carbide transient voltage supression devices

Power module for supporting high current densities

Bipolar junction transistor structure for reduced current crowding

Schottky diode