Shanghai
China
30
2023-07-27
The entities that hold a legal rights for patent applications filed by inventor Wang Chunming:
Chunming Wang from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:
METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CELLS USING TWO POLYSILICON DEPOSITION STEPS
#2 | 2023-06-15SPLIT GATE NON-VOLATILE MEMORY CELLS, HV AND LOGIC DEVICES WITH FINFET STRUCTURES, AND METHOD OF MAKING SAME
#3 | 2022-09-15Split-gate flash memory cell with improved control gate capacitive coupling, and method of making same
#4 | 2022-09-01Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate
#5 | 2022-07-07Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates
#6 | 2022-06-30Architectures for storing and retrieving system data in a non-volatile memory system
#7 | 2022-05-05SPLIT GATE NON-VOLATILE MEMORY CELLS, HV AND LOGIC DEVICES WITH FINFET STRUCTURES, AND METHOD OF MAKING SAME
#8 | 2022-03-31Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making same
#9 | 2022-03-31Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same
#10 | 2022-03-24Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices
#11 | 2022-02-17Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks
#12 | 2021-12-23Method of making memory cells, high voltage devices and logic devices on a substrate
#13 | 2021-10-21Non-volatile memory system using strap cells in source line pull down circuits
#14 | 2021-01-07Method of forming split gate memory cells
#15 | 2021-01-07Method of forming split-gate flash memory cell with spacer defined floating gate and discretely formed polysilicon gates
#16 | 2020-12-31Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps
#17 | 2020-01-16Method of making split gate non-volatile flash memory cell
#18 | 2020-01-09Method of making split gate non-volatile flash memory cell
#19 | 2020-01-09Method of making split gate non-volatile flash memory cell
#20 | 2019-07-11Non-volatile memory cells with floating gates in dedicated trenches
#21 | 2019-07-11Twin bit non-volatile memory cells with floating gates in substrate trenches
#22 | 2019-06-27Method of making split gate non-volatile flash memory cell
#23 | 2019-05-16Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cells Using Two Polysilicon Deposition Steps
#24 | 2018-08-09Method of forming split-gate, twin-bit non-volatile memory cell
#25 | 2018-03-08Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition steps
#26 | 2017-11-23Method of making split gate non-volatile flash memory cell
#27 | 2017-11-16Reduced size split gate non-volatile flash memory cell and method of making same
#28 | 2017-11-02Split-gate, twin-bit non-volatile memory cell
#29 | 2014-08-07Method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby
#30 | 2014-07-24Non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween
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