Inventor profile of:

Masayoshi KOIKE

City:

Suwon

Country:

South Korea

Published Applications:

27

Last publication date:

2014-05-08

Top Assignees for applications by Masayoshi KOIKE

The entities that hold a legal rights for patent applications filed by inventor KOIKE Masayoshi:

Recent patent applications by KOIKE Masayoshi

Masayoshi KOIKE from Suwon, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-05-08
US20140127848A1
Electricity

NITRIDE SEMICONDUCTOR LIGHT-EMITTTING DEVICE AND PROCESS FOR PRODUCING THE SAME

#2 | 2013-02-14
US20130037801A1
Electricity

LIGHT EMITTING DIODE CHIP

#3 | 2012-09-06
US20120223660A1
Electricity

White light emitting device

#4 | 2011-08-04
US20110189457A1
Chemistry; metallurgy

METHOD OF FORMING NITRIDE FILM AND NITRIDE STRUCTURE

#5 | 2009-10-29
US20090269909A1
Electricity

Nitride based semiconductor device using nanorods and process for preparing the same

#6 | 2009-10-15
US20090258453A1
Electricity

Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

#7 | 2009-07-09
US20090173955A1
Electricity

White light emitting device

#8 | 2008-02-21
US20080044937A1
Electricity

Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode

#9 | 2007-11-01
US20070254459A1
Chemistry; metallurgy

Method of growing non-polar m-plane nitride semiconductor

#10 | 2007-11-01
US20070254445A1
Chemistry; metallurgy

Method of forming nitride film and nitride structure

#11 | 2007-10-25
US20070246714A1
Electricity

LED package

#12 | 2007-08-16
US20070187702A1
Electricity

Facet extraction LED and method for manufacturing the same

#13 | 2007-07-12
US20070159064A1
Electricity

White light emitting device

#14 | 2007-06-21
US20070141741A1
Chemistry; metallurgy

Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device

#15 | 2007-05-10
US20070105259A1
Chemistry; metallurgy

Growth method of indium gallium nitride

#16 | 2007-01-18
US20070012940A1
Electricity

Wavelength-convertible light emitting diode package

#17 | 2007-01-11
US20070007541A1
Electricity

White light emitting device

#18 | 2006-12-28
US20060292718A1
Chemistry; metallurgy

Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting device

#19 | 2006-12-21
US20060286777A1
Electricity

Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

#20 | 2006-11-30
US20060268955A1
Electricity

Vertical structure semiconductor light emitting device and method for manufacturing the same

#21 | 2006-11-30
US20060267026A1
Electricity

White light emitting device

#22 | 2006-09-28
US20060216914A1
Chemistry; metallurgy

Method of growing non-polar a-plane gallium nitride

#23 | 2006-07-06
US20060148186A1
Chemistry; metallurgy

Method and apparatus for manufacturing gallium nitride based single crystal substrate

#24 | 2006-05-04
US20060091408A1
Electricity

Nitride based semiconductor device using nanorods and process for preparing the same

#25 | 2005-11-03
US20050241571A1
Chemistry; metallurgy

Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same

#26 | 2005-10-06
US20050221526A1
Electricity

Process for producing nitride semiconductor light-emitting device

#27 | 2005-10-06
US20050218416A1
Electricity

Nitride semiconductor light-emitting device and process for producing the same

InventorID:

85064 ⎘