Santa Clara, California
United States
44
2014-03-27
The entities that hold a legal rights for patent applications filed by inventor KUMAR Pragati:
Pragati KUMAR from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:
ALD processing techniques for forming non-volatile resistive switching memories
#2 | 2014-02-20Nonvolatile memory elements
#3 | 2014-02-13Resistive-switching nonvolatile memory elements
#4 | 2014-02-06Non-volatile resistive-switching memories
#5 | 2014-01-02Reduction of forming voltage in semiconductor devices
#6 | 2013-10-31Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes
#7 | 2013-10-17ALD processing techniques for forming non-volatile resistive switching memories
#8 | 2013-10-17System and method for step coverage measurement
#9 | 2013-08-22Resistive-switching nonvolatile memory elements
#10 | 2013-05-02Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#11 | 2013-04-18Enhanced work function layer supporting growth of rutile phase titanium oxide
#12 | 2013-03-21Inexpensive electrode materials to facilitate rutile phase titanium oxide
#13 | 2013-03-21Yttrium and titanium high-k dielectric films
#14 | 2013-03-21Yttrium and titanium high-k dielectric films
#15 | 2013-03-07Nonvolatile memory elements
#16 | 2013-02-21Titanium based high-K dielectric films
#17 | 2013-02-14Inexpensive electrode materials to facilitate rutile phase titanium oxide
#18 | 2012-12-20Resistive-switching nonvolatile memory elements
#19 | 2012-10-11Closed loop sputtering controlled to enhance electrical characteristics in deposited layer
#20 | 2012-08-23Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes
#21 | 2012-07-05Fabrication of semiconductor stacks with ruthenium-based materials
#22 | 2012-06-21Methods for forming high-K crystalline films and related devices
#23 | 2012-06-21Method of forming stacked metal oxide layers
#24 | 2012-06-14PROCESS SEQUENCING FOR HPC ALD SYSTEM
#25 | 2012-06-14Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#26 | 2012-06-07Methods for forming resistive switching memory elements by heating deposited layers
#27 | 2012-05-17System and method for step coverage measurement
#28 | 2012-05-17Nonvolatile memory elements
#29 | 2012-04-12Method of forming non-volatile resistive-switching memories
#30 | 2012-03-15Yttrium and titanium high-k dielectric films
#31 | 2011-11-03ALD processing techniques for forming non-volatile resistive-switching memories
#32 | 2011-08-25Enhanced work function layer supporting growth of rutile phase titanium oxide
#33 | 2011-08-25Titanium-based high-K dielectric films
#34 | 2011-04-07Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#35 | 2011-01-20Yttrium and titanium high-K dielectric film
#36 | 2011-01-04Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#37 | 2010-12-30Titanium-based high-K dielectric films
#38 | 2009-12-10ALD processing techniques for forming non-volatile resistive-switching memories
#39 | 2009-11-05Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer
#40 | 2009-11-05Reduction of forming voltage in semiconductor devices
#41 | 2009-11-05Non-volatile resistive-switching memories
#42 | 2009-09-10Methods for forming resistive switching memory elements by heating deposited layers
#43 | 2009-01-29Nonvolatile memory element including resistive switching metal oxide layers
#44 | 2008-11-13Resistive-switching nonvolatile memory elements
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