Frank Hille

Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor Device

Chip package, method of forming a chip package and method of forming an electrical contact

Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

High voltage termination structure of a power semiconductor device

Power semiconductor device load terminal

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

Metallization and its use in, in particular, an IGBT or a diode

Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Power semiconductor device load terminal

Semiconductor to metal transition for semiconductor devices

Semiconductor to metal transition

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor component

Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure

Semiconductor component

Metallization and Its Use In, In Particular, an IGBT or a Diode

Metallization and its use in, in particular, an IGBT or a diode

Semiconductor device and fabrication method

Method for fabricating a semiconductor having a graded pn junction

Reduced free-charge carrier lifetime device

Power semiconductor device

Semiconductor device and fabrication method

Semiconductor device including a free wheeling diode

Semiconductor component

Method for producing an integrated circuit having semiconductor zones with a steep doping profile

Reverse conducting IGBT with vertical carrier lifetime adjustment