Inventor profile of:

Michael Murphy

City:

Somerset, New Jersey

Country:

United States

Published Applications:

16

Last publication date:

2018-08-23

Top Assignees for applications by Michael Murphy

The entities that hold a legal rights for patent applications filed by inventor Murphy Michael:

Recent patent applications by Murphy Michael

Michael Murphy from Somerset, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-08-23
US20180237943A1
Chemistry; metallurgy

Alkyl push flow for vertical flow rotating disk reactors

#2 | 2014-08-14
US20140224178A1
Chemistry; metallurgy

Alkyl push flow for vertical flow rotating disk reactors

#3 | 2012-09-20
US20120238063A1
Electricity

Termination and Contact Structures for a High Voltage Gan-Based Heterojunction Transistor

#4 | 2011-09-08
US20110215339A1
Electricity

Termination and contact structures for a high voltage GaN-based heterojunction transistor

#5 | 2011-05-05
US20110101371A1
Electricity

Gallium nitride semiconductor

#6 | 2009-12-31
US20090321787A1
Electricity

High voltage GaN-based heterojunction transistor structure and method of forming same

#7 | 2009-02-05
US20090035925A1
Electricity

Gallium nitride semiconductor device

#8 | 2008-09-25
US20080230785A1
Electricity

Termination and contact structures for a high voltage GaN-based heterojunction transistor

#9 | 2008-09-25
US20080230784A1
Electricity

Cascode circuit employing a depletion-mode, GaN-based FET

#10 | 2007-03-29
US20070071896A1
Chemistry; metallurgy

Alkyl push flow for vertical flow rotating disk reactors

#11 | 2006-10-03
US10721488
-

Semiconductor structures for gallium nitride-based devices

#12 | 2006-07-13
US20060154455A1
Electricity

Gallium nitride-based devices and manufacturing process

#13 | 2006-07-06
US20060145283A1
Electricity

Gallium nitride semiconductor device

#14 | 2005-09-15
US20050202661A1
Electricity

Non-activated guard ring for semiconductor devices

#15 | 2005-08-18
US20050179107A1
Electricity

Low doped layer for nitride-based semiconductor device

#16 | 2005-08-18
US20050179104A1
Electricity

Lateral conduction Schottky diode with plural mesas

InventorID:

867543 ⎘