Inventor profile of:

Andreas Goebel

City:

Mountain View, California

Country:

United States

Published Applications:

41

Last publication date:

2026-02-26

Top Assignees for applications by Andreas Goebel

The entities that hold a legal rights for patent applications filed by inventor Goebel Andreas:

Recent patent applications by Goebel Andreas

Andreas Goebel from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-02-26
US20260059795A1
Electricity

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT

#2 | 2025-11-27
US20250366078A1
Electricity

RELATING TO SOI WAFERS AND DEVICES WITH BURIED STRESSORS

#3 | 2025-10-16
US20250321392A1
Physics

ELECTRICAL AND OPTICAL INTERCONNECT LINKS COMBINED IN A HYBRID INTERPOSER

#4 | 2025-05-22
US20250167523A1
Electricity

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

#5 | 2025-05-15
US20250158362A1
Electricity

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

#6 | 2024-10-17
US20240347641A1
Electricity

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT

#7 | 2024-02-29
US20240072150A1
Electricity

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

#8 | 2024-01-04
US20240006532A1
Electricity

SOI WAFERS AND DEVICES WITH BURIED STRESSORS

#9 | 2023-10-26
US20230344200A1
Electricity

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

#10 | 2023-10-05
US20230317814A9
Electricity

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

#11 | 2023-01-05
US20230006066A1
Electricity

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

#12 | 2022-07-14
US20220223735A1
Electricity

Relating to SOI wafers and devices with buried stressors

#13 | 2022-06-02
US20220173575A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#14 | 2021-04-29
US20210126981A1
Electricity

MIS contact structure with metal oxide conductor

#15 | 2021-03-18
US20210083123A1
Electricity

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

#16 | 2021-02-18
US20210050450A1
Electricity

SOI wafers and devices with buried stressor

#17 | 2020-10-22
US20200335945A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#18 | 2020-08-27
US20200273991A1
Electricity

SOI wafers and devices with buried stressor

#19 | 2020-05-14
US20200152758A1
Electricity

MIS contact structure with metal oxide conductor

#20 | 2020-03-19
US20200091347A1
Electricity

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

#21 | 2019-04-18
US20190115726A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#22 | 2019-04-11
US20190109241A1
Electricity

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

#23 | 2019-02-28
US20190067439A1
Electricity

MIS contact structure with metal oxide conductor

#24 | 2018-07-26
US20180212056A1
Electricity

STRAINED SEMICONDUCTOR-ON-INSULATOR BY DEFORMATION OF BURIED INSULATOR INDUCED BY BURIED STRESSOR

#25 | 2018-05-24
US20180145184A1
Electricity

Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height

#26 | 2018-03-22
US20180083115A1
Electricity

MIS contact structure with metal oxide conductor

#27 | 2018-03-01
US20180062352A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#28 | 2017-11-09
US20170323973A1
Electricity

SOI WAFERS AND DEVICES WITH BURIED STRESSOR

#29 | 2017-04-11
US15186378
Electricity

MIS contact structure with metal oxide conductor

#30 | 2016-07-21
US20160211649A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#31 | 2015-09-03
US20150249320A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#32 | 2014-12-18
US20140369372A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#33 | 2013-02-14
US20130039664A1
Electricity

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

#34 | 2011-04-21
US20110091146A1
Physics

Optical modulators employing charge state control of deep levels

#35 | 2010-03-18
US20100065887A1
Electricity

Field effect transistor source or drain with a multi-facet surface

#36 | 2009-10-08
US20090252495A1
Physics

Method and apparatus for demultiplexing optical signals in a passive optical network

#37 | 2008-05-29
US20080124084A1
Physics

Optical assemblies and methods for fabrication of optical assemblies

#38 | 2008-02-28
US20080050081A1
Physics

Wafer-level alignment of optical elements

#39 | 2008-01-17
US20080013952A1
Physics

Method and apparatus for demultiplexing optical signals in a passive optical network

#40 | 2007-12-20
US20070293044A1
Electricity

Patterning 3D features in a substrate

#41 | 2007-03-08
US20070053643A1
Physics

Ridge technique for fabricating an optical detector and an optical waveguide

InventorID:

88597 ⎘