Inventor profile of:

Hans-Peter Moll

City:

Dresden

Country:

Germany

Published Applications:

37

Last publication date:

2019-04-25

Top Assignees for applications by Hans-Peter Moll

The entities that hold a legal rights for patent applications filed by inventor Moll Hans-Peter:

Recent patent applications by Moll Hans-Peter

Hans-Peter Moll from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-04-25
US20190122921A1
Electricity

Semiconductor device including a leveling dielectric fill material

#2 | 2019-02-07
US20190043764A1
Electricity

Semiconductor devices and manufacturing techniques for reduced aspect ratio of neighboring gate electrode lines

#3 | 2017-11-02
US20170317108A1
Electricity

FDSOI-capacitor

#4 | 2017-06-08
US20170162557A1
Electricity

TRENCH BASED CHARGE PUMP DEVICE

#5 | 2017-05-11
US20170133287A1
Electricity

Test structures and method of forming an according test structure

#6 | 2017-03-09
US20170067955A1
Physics

Detection of gate-to-source/drain shorts

#7 | 2017-03-02
US20170062438A1
Electricity

ELECTRICAL GATE-TO-SOURCE/DRAIN CONNECTION

#8 | 2016-11-24
US20160343659A1
Electricity

E-fuse in SOI configuration

#9 | 2016-10-27
US20160315016A1
Electricity

Method of manufacturing P-channel FET device with SiGe channel

#10 | 2016-10-20
US20160307926A1
Electricity

Integrated circuit product with bulk and SOI semiconductor devices

#11 | 2016-10-13
US20160300856A1
Electricity

Semiconductor device with thin-film resistor

#12 | 2016-09-15
US20160268431A1
Electricity

Fully depleted device with buried insulating layer in channel region

#13 | 2016-09-08
US20160260606A1
Electricity

METHODS OF FORMING A MASKING PATTERN AND A SEMICONDUCTOR DEVICE STRUCTURE

#14 | 2016-08-25
US20160247891A1
Electricity

Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and method for the formation thereof

#15 | 2016-08-23
US14813292
Electricity

Compact FDSOI device with Bulex contact extending through buried insulating layer adjacent gate structure for back-bias

#16 | 2016-07-14
US20160204129A1
Electricity

FDSOI—capacitor

#17 | 2016-07-14
US20160204128A1
Electricity

Cointegration of bulk and SOI semiconductor devices

#18 | 2016-04-28
US20160118499A1
Electricity

FD devices in advanced semiconductor techniques

#19 | 2016-03-03
US20160064471A1
Electricity

Embedded capacitor

#20 | 2015-12-10
US20150357433A1
Electricity

INTEGRATED CIRCUITS WITH VERTICAL JUNCTIONS BETWEEN nFETS AND pFETS, AND METHODS OF MANUFACTURING THE SAME

#21 | 2015-03-26
US20150084183A1
Electricity

Integrated circuits with protected resistors and methods for fabricating the same

#22 | 2015-03-05
US20150064872A1
Electricity

Top corner rounding by implant-enhanced wet etching

#23 | 2014-09-04
US20140248778A1
Electricity

Methods of forming asymmetric spacers on various structures on integrated circuit products

#24 | 2010-04-15
US20100090348A1
Electricity

Single-Sided Trench Contact Window

#25 | 2010-04-15
US20100090264A1
Electricity

Interconnect structure for semiconductor devices

#26 | 2009-02-12
US20090039458A1
Electricity

INTEGRATED DEVICE

#27 | 2008-02-21
US20080044980A1
Electricity

Method of forming a semiconductor device

#28 | 2007-04-05
US20070075361A1
Electricity

Method for producing a trench transistor and trench transistor

#29 | 2007-03-08
US20070054432A1
Electricity

METHOD FOR PRODUCING A STRUCTURE WITH A LOW ASPECT RATIO

#30 | 2006-10-24
US10228886
-

Method for fabricating a self-aligning mask

#31 | 2006-05-02
US10801781
-

Process for producing an etching mask on a microstructure, in particular a semiconductor structure with trench capacitors, and corresponding use of the etching mask

#32 | 2005-11-15
US10721752
-

Method for fabricating a semiconductor structure

#33 | 2005-10-13
US20050224451A1
Electricity

Method for masking a recess in a structure having a high aspect ratio

#34 | 2005-08-23
US10425179
-

Semiconductor substrate with trenches of varying depth

#35 | 2005-08-02
US10416674
-

Method for fabricating an integrated semiconductor component

#36 | 2005-07-12
US10722360
-

Method for fabricating a trench capacitor with an insulation collar

#37 | 2005-05-05
US20050093049A1
Electricity

Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor

InventorID:

896239 ⎘