Thomas Scheruebl

EUV CD CONTROL BY MODIFICATION OF ML REFLECTIVITY USING LASER TREATMENT

METHODS, COMPUTER PROGRAMS AND APPARATUSES FOR TREATING AN OPTICAL ELEMENT FOR THE EXTREME ULTRAVIOLET WAVELENGTH RANGE

Method for detecting a structure of a lithography mask and device for carrying out the method

Apparatus and method for analyzing an element of a photolithography process with the aid of a transformation model

Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography

Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system

Method for analyzing a photomask

Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section

Method for analyzing masks for photolithography

Method and apparatus for measuring of masks for the photo-lithography

Method and apparatus for analyzing a group of photolithographic masks

Arrangement for inspecting objects, especially masks in microlithography

Polarizer device for generating a defined spatial distribution of polarization states

Microscope imaging system and method for emulating a high aperture imaging system, particularly for mask inspection

Imaging system for an extreme ultraviolet (EUV) beam-based microscope