Inventor profile of:

Benjamin Schmiege

City:

Santa Clara, California

Country:

United States

Published Applications:

29

Last publication date:

2020-12-17

Top Assignees for applications by Benjamin Schmiege

The entities that hold a legal rights for patent applications filed by inventor Schmiege Benjamin:

Recent patent applications by Schmiege Benjamin

Benjamin Schmiege from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-12-17
US20200392624A1
Chemistry; metallurgy

METHODS AND APPARATUS FOR DEPOSITING YTTRIUM-CONTAINING FILMS

#2 | 2020-05-14
US20200148712A1
Chemistry; metallurgy

Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

#3 | 2019-12-19
US20190385849A1
Electricity

Methods of forming self-aligned vias

#4 | 2019-03-14
US20190080904A1
Electricity

Selective deposition defects removal by chemical etch

#5 | 2019-02-28
US20190062916A1
Chemistry; metallurgy

Lanthanide, Yttrium and Scandium precursors for ALD, CVD and Thin Film Doping and Methods of Use

#6 | 2019-01-17
US20190017171A1
Chemistry; metallurgy

Methods and apparatus for depositing yttrium-containing films

#7 | 2019-01-10
US20190013202A1
Electricity

Methods of forming self-aligned vias

#8 | 2018-12-20
US20180366322A1
Electricity

In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD

#9 | 2018-11-29
US20180342403A1
Electricity

Selective dry etching of metal films comprising multiple metal oxides

#10 | 2018-09-20
US20180265988A1
Chemistry; metallurgy

System and method for controllable non-volatile metal removal

#11 | 2018-07-12
US20180195179A1
Chemistry; metallurgy

Methods of etching films with reduced surface roughness

#12 | 2018-06-07
US20180155379A1
Chemistry; metallurgy

Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

#13 | 2018-05-31
US20180148466A1
Chemistry; metallurgy

Precursors for deposition of metal, metal nitride and metal oxide based films of transition metals

#14 | 2018-04-05
US20180096847A1
Electricity

Methods of forming self-aligned vias

#15 | 2018-02-08
US20180040486A1
Electricity

Methods of etching films comprising transition metals

#16 | 2017-12-14
US20170356083A1
Chemistry; metallurgy

Lanthanide, Yttrium And Scandium Precursors For ALD, CVD And Thin Film Doping And Methods Of Use

#17 | 2017-06-08
US20170159188A1
Chemistry; metallurgy

System and method for controllable non-volatile metal removal

#18 | 2017-04-06
US20170096740A1
Chemistry; metallurgy

Methods of etching films with reduced surface roughness

#19 | 2016-12-22
US20160372324A1
Electricity

Deposition methods for uniform and conformal hybrid titanium oxide films

#20 | 2016-10-06
US20160293449A1
Electricity

Methods of etching films comprising transition metals

#21 | 2016-09-20
US14734222
Electricity

Selectively etching metals and metal nitrides conformally

#22 | 2016-09-15
US20160265121A1
Chemistry; metallurgy

System and method for controllable non-volatile metal removal

#23 | 2016-08-04
US20160222522A1
Chemistry; metallurgy

Oxide and metal removal

#24 | 2016-02-04
US20160032460A1
Chemistry; metallurgy

Methods of etching films with reduced surface roughness

#25 | 2015-12-03
US20150345028A1
Chemistry; metallurgy

Oxide and metal removal

#26 | 2015-07-09
US20150194298A1
Electricity

Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition

#27 | 2014-11-06
US20140326276A1
Chemistry; metallurgy

Cobalt removal for chamber clean or pre-clean process

#28 | 2014-09-18
US20140273492A1
Electricity

Methods of etching films comprising transition metals

#29 | 2014-09-11
US20140255606A1
Chemistry; metallurgy

Methods for depositing films comprising cobalt and cobalt nitrides

InventorID:

903816 ⎘