Inventor profile of:

Kyle Terrill

City:

Santa Clara, California

Country:

United States

Published Applications:

63

Last publication date:

2019-10-10

Top Assignees for applications by Kyle Terrill

The entities that hold a legal rights for patent applications filed by inventor Terrill Kyle:

Recent patent applications by Terrill Kyle

Kyle Terrill from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-10-10
US20190312137A1
Electricity

High-electron-mobility transistor with buried interconnect

#2 | 2019-08-01
US20190237403A1
Electricity

Trench MOSFET with self-aligned body contact with spacer

#3 | 2019-06-27
US20190198651A1
Electricity

High-electron-mobility transistor devices

#4 | 2018-08-16
US20180233904A1
Electricity

Current limiting systems and methods

#5 | 2018-07-26
US20180212048A1
Electricity

Transistor structure with improved unclamped inductive switching immunity

#6 | 2018-06-07
US20180158942A1
Electricity

High-electron-mobility transistor with buried interconnect

#7 | 2018-06-07
US20180158940A1
Electricity

High-electron-mobility transistor devices

#8 | 2017-10-12
US20170294432A1
Electricity

Semiconductor device having multiple gate pads

#9 | 2017-09-21
US20170271498A1
Electricity

Semiconductor device with non-uniform trench oxide layer

#10 | 2017-06-08
US20170162403A1
Electricity

Method for fabricating stack die package

#11 | 2017-04-27
US20170117354A1
Electricity

MOSFET active area and edge termination area charge balance

#12 | 2017-04-20
US20170110404A1
Electricity

Trench MOSFET with self-aligned body contact with spacer

#13 | 2017-04-13
US20170104096A1
Electricity

Structures and methods of fabricating dual gate devices

#14 | 2017-01-26
US20170025527A1
Electricity

Semiconductor device with trench-like feed-throughs

#15 | 2017-01-12
US20170012118A1
Electricity

Semiconductor device with non-uniform trench oxide layer

#16 | 2016-12-08
US20160359018A1
Electricity

Split gate semiconductor device with curved gate oxide profile

#17 | 2016-08-04
US20160225622A1
Electricity

System and method for substrate wafer back side and edge cross section seals

#18 | 2016-07-28
US20160218196A1
Electricity

Transistor structure with improved unclamped inductive switching immunity

#19 | 2016-02-25
US20160056276A1
Electricity

Transistor structure with improved unclamped inductive switching immunity

#20 | 2015-08-27
US20150243779A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#21 | 2015-07-09
US20150194495A1
Electricity

MOSFET termination trench

#22 | 2015-04-23
US20150108568A1
Electricity

SEMICONDUCTOR STRUCTURE WITH HIGH ENERGY DOPANT IMPLANTATION

#23 | 2014-09-18
US20140273344A1
Electricity

Method for fabricating stack die package

#24 | 2014-09-18
US20140264804A1
Electricity

Stack die package

#25 | 2014-08-21
US20140235023A1
Electricity

Trench metal oxide semiconductor with recessed trench material and remote contacts

#26 | 2014-04-10
US20140099765A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#27 | 2013-11-12
US12552205
-

Electrostatic discharge protection circuit for integrated circuits

#28 | 2013-10-24
US20130279057A1
Electricity

Current limiting systems and methods

#29 | 2013-08-15
US20130207227A1
Electricity

MOSFET termination trench

#30 | 2013-02-14
US20130040457A1
Electricity

Power MOSFET contact metallization

#31 | 2012-11-22
US20120292696A1
Electricity

Semiconductor device having reduced gate charges and superior figure of merit

#32 | 2012-08-30
US20120220092A1
Electricity

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

#33 | 2012-08-23
US20120211828A1
Electricity

HYBRID SPLIT GATE SEMICONDUCTOR

#34 | 2012-03-22
US20120068178A1
Electricity

Trench polysilicon diode

#35 | 2011-12-06
US12611865
-

Trench polysilicon diode

#36 | 2011-11-03
US20110266620A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#37 | 2011-10-20
US20110254084A1
Electricity

Structures and methods of fabricating dual gate devices

#38 | 2011-09-01
US20110210406A1
Electricity

Structures of and methods of fabricating split gate MIS devices

#39 | 2011-08-18
US20110198704A1
Electricity

Power switch with active snubber

#40 | 2011-05-05
US20110101525A1
Electricity

Semiconductor device with trench-like feed-throughs

#41 | 2011-04-21
US20110089486A1
Electricity

Super-high density trench MOSFET

#42 | 2011-04-21
US20110089485A1
Electricity

Split gate semiconductor device with curved gate oxide profile

#43 | 2011-03-03
US20110053326A1
Electricity

Super junction trench power MOSFET device fabrication

#44 | 2011-03-03
US20110049682A1
Electricity

System and method for substrate wafer back side and edge cross section seals

#45 | 2011-03-03
US20110049614A1
Electricity

Super junction trench power MOSFET devices

#46 | 2010-01-28
US20100019316A1
Electricity

Method of fabricating super trench MOSFET including buried source electrode

#47 | 2009-09-01
US11190682
-

Electrostatic discharge protection circuit for integrated circuits

#48 | 2009-04-09
US20090090967A1
Electricity

MOSFET active area and edge termination area charge balance

#49 | 2008-10-23
US20080258212A1
Electricity

Trench metal oxide semiconductor with recessed trench material and remote contacts

#50 | 2008-07-31
US20080182376A1
Electricity

Method of fabricating super trench MOSFET including buried source electrode

#51 | 2008-07-03
US20080157281A1
Electricity

Ultra-low drain-source resistance power MOSFET

#52 | 2008-06-12
US20080135872A1
Electricity

Trench polysilicon diode

#53 | 2007-12-13
US20070284754A1
Electricity

Power MOSFET contact metallization

#54 | 2007-09-27
US20070221989A1
Electricity

Ultra-low drain-source resistance power MOSFET

#55 | 2007-08-16
US20070187753A1
Electricity

Super trench MOSFET including buried source electrode

#56 | 2007-06-28
US20070145411A1
Electricity

Trench polysilicon diode

#57 | 2006-03-14
US10180154
-

Self-aligned differential oxidation in trenches by ion implantation

#58 | 2005-11-03
US20050242392A1
Electricity

Super trench MOSFET including buried source electrode and method of fabricating the same

#59 | 2005-07-26
US10264816
-

Method for making trench MIS device with reduced gate-to-drain capacitance

#60 | 2005-06-07
US10106812
-

Trench MIS device with graduated gate oxide layer

#61 | 2005-04-19
US9927320
-

Trench MIS device with reduced gate-to-drain capacitance

#62 | 2005-04-05
US10106896
-

Method of fabricating trench MIS device with graduated gate oxide layer

#63 | 2005-02-01
US9927143
-

Trench MIS device with active trench corners and thick bottom oxide

InventorID:

90630 ⎘