Inventor profile of:

Byung Jin Cho

City:

Daejeon

Country:

South Korea

Published Applications:

29

Last publication date:

2026-06-18

Top Assignees for applications by Byung Jin Cho

The entities that hold a legal rights for patent applications filed by inventor Cho Byung Jin:

Recent patent applications by Cho Byung Jin

Byung Jin Cho from Daejeon, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260173384A1
Electricity

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH INCREASED ELECTRON MOBILITY AND ELECTRONIC SYSTEM INCLUDING THE SAME

#2 | 2026-02-19
US20260052731A1
Electricity

OXIDE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

#3 | 2025-12-18
US20250386525A1
Electricity

CAPACITOR, METHOD OF MANUFACTURING THE CAPACITOR, ELECTRONIC DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE

#4 | 2025-09-25
US20250301628A1
Electricity

GATE ALL AROUND FIELD EFFECT TRANSISTOR INCLUDING VERTICAL PILLAR AND FABRICATION METHOD THEREFOR

#5 | 2025-09-18
US20250294796A1
Electricity

GATE ALL AROUND FIELD EFFECT TRANSISTOR HAVING MULTIPLE GATE STACK STRUCTURE AND FABRICATION METHOD THEREFOR

#6 | 2025-09-18
US20250294775A1
Electricity

SEMICONDUCTOR MEMORY DEVICE INCLUDING FERROELECTRIC CAPACITOR AND MANUFACTURING METHOD THEREOF

#7 | 2025-09-18
US20250294773A1
Electricity

DUAL SWITCHING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

#8 | 2025-09-18
US20250294758A1
Electricity

OXIDE SEMICONDUCTOR MEMORY DEVICE WITH DUAL CHANNEL STRUCTURE AND MANUFACTURING METHOD THEREOF

#9 | 2025-05-15
US20250158599A1
Electricity

STATIC CHANGE SENSE FLIP-FLOP

#10 | 2023-03-09
US20230071420A1
Electricity

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME

#11 | 2022-08-04
US20220246716A1
Electricity

Capacitor for dynamic random access memory, DRAM including the same and methods of fabricating thereof

#12 | 2022-04-14
US20220115543A1
Electricity

Charge trapping non-volatile organic memory device

#13 | 2019-10-17
US20190318978A1
Electricity

FLEXIBLE HEAT SINK FOR THERMOELECTRIC DEVICE AND FLEXIBLE THERMOELECTRIC DEVICE CONTAINING IT

#14 | 2019-03-14
US20190081223A1
Electricity

SELF-GENERATION SENSOR DEVICE AND SELF-GENERATION SENSOR SYSTEM USING THE SAME

#15 | 2018-10-11
US20180294400A1
Electricity

Fe—Ni/Ti metalized skutterudite thermoelectric material and method of manufacturing the same

#16 | 2018-09-27
US20180277362A1
Electricity

Method of Surface Localized Pore Sealing of Porous Dielectric Material

#17 | 2018-08-16
US20180233648A1
Electricity

FLEXIBLE THERMOELECTRIC ELELMENT AND PRODUCTION METHOD THEREFOR

#18 | 2017-12-14
US20170358726A1
Electricity

Flexible thermoelectric system

#19 | 2017-12-14
US20170358488A1
Electricity

Method of sealing open pores on surface of porous dielectric material using iCVD process

#20 | 2017-07-20
US20170205364A1
Physics

High-temperature structure for measuring properties of curved thermoelectric device, and system and method for measuring properties of curved thermoelectric device using the same

#21 | 2016-10-13
US20160300921A1
Electricity

Semiconductor element, method for fabricating the same, and semiconductor device including the same

#22 | 2016-02-25
US20160056360A1
Electricity

Flexible Thermoelectric Device Using Mesh Type Substrate and Manufacturing Method Thereof

#23 | 2015-10-01
US20150280011A1
Electricity

Method of manufacturing n-doped graphene and electrical component using NHF, and graphene and electrical component thereby

#24 | 2014-10-09
US20140299975A1
Electricity

Method and board for growing high-quality graphene layer using high pressure annealing

#25 | 2014-10-02
US20140295080A1
Chemistry; metallurgy

Method for growing high-quality graphene layer

#26 | 2012-12-13
US20120313079A1
Electricity

Graphene electronic devices having multi-layered gate insulating layer

#27 | 2012-11-08
US20120281484A1
Physics

Non-volatile memory device and MOSFET using graphene gate electrode

#28 | 2012-10-18
US20120261645A1
Electricity

Graphene device having physical gap

#29 | 2011-08-04
US20110189406A1
Chemistry; metallurgy

METHOD OF FORMING GRAPHENE LAYER

InventorID:

921069 ⎘