Reiner Barthelmess

Device for Producing an Edge Structure of a Semiconductor Component

Method and Device for Producing an Edge Structure of a Semiconductor Component

Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting

Short-circuit semiconductor component and method for operating same

Short-circuit semiconductor component and method for operating it

Disc-shaped thyristor for a plurality of plated-through semiconductor components

Semiconductor component including a short-circuit structure

Semiconductor component with optimized edge termination

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

Method of fabricating a diode

Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone

Semiconductor component including a short-circuit structure

THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR

Arrangement including a semiconductor device and a connecting element

Diode

Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

Semiconductor component and method for producing the same

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

Thyristor with recovery protection

High speed diode

Semiconductor component with a channel stop zone

Diode

Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone

Semiconductor component and method for producing the same

Method for fabricating a semiconductor having a field zone

Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

Thyristor component with improved blocking capabilities in the reverse direction