Inventor profile of:

Uihui KWON

City:

Hwaseong-si

Country:

South Korea

Published Applications:

21

Last publication date:

2025-06-12

Top Assignees for applications by Uihui KWON

The entities that hold a legal rights for patent applications filed by inventor KWON Uihui:

Recent patent applications by KWON Uihui

Uihui KWON from Hwaseong-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-06-12
US20250194217A1
Electricity

INTEGRATED CIRCUIT DEVICE

#2 | 2025-03-20
US20250098224A1
Electricity

SEMICONDUCTOR DEVICE

#3 | 2024-04-04
US20240113182A1
Electricity

Integrated circuit device

#4 | 2023-09-07
US20230282662A1
Electricity

IMAGE SENSOR

#5 | 2023-08-03
US20230246050A1
Electricity

IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT

#6 | 2023-03-02
US20230068212A1
Electricity

Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereof

#7 | 2022-11-24
US20220376119A1
Electricity

Semiconductor protection device

#8 | 2022-09-08
US20220285511A1
Electricity

Semiconductor device

#9 | 2022-05-26
US20220165857A1
Electricity

Integrated circuit device

#10 | 2022-01-11
US17320873
Electricity

Image sensor

#11 | 2021-10-28
US20210336026A1
Electricity

Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereof

#12 | 2021-06-03
US20210165940A1
Physics

Method and apparatus for estimating aging of integrated circuit

#13 | 2021-03-04
US20210063999A1
Physics

Method and electronic device for guiding semiconductor manufacturing process

#14 | 2020-03-12
US20200082051A1
Physics

Standard cell design system, standard cell design optimization method thereof, and semiconductor design system

#15 | 2020-03-05
US20200075656A1
Electricity

Image sensors having grating structures therein that provide enhanced diffraction of incident light

#16 | 2019-09-26
US20190294748A1
Physics

SIMULATION SYSTEM ESTIMATING SELF-HEATING CHARACTERISTIC OF CIRCUIT AND DESIGN METHOD THEREOF

#17 | 2019-05-02
US20190130059A1
Physics

SIMULATION SYSTEM ESTIMATING SELF-HEATING CHARACTERISTIC OF CIRCUIT AND DESIGN METHOD THEREOF

#18 | 2016-09-01
US20160254348A1
Electricity

Semiconductor devices having tapered active regions

#19 | 2016-03-24
US20160086841A1
Electricity

METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED USING THE SAME

#20 | 2016-02-18
US20160048622A1
Physics

Simulation system estimating self-heating characteristic of circuit and design method thereof

#21 | 2014-11-13
US20140332863A1
Electricity

FinFET semiconductor device and method of manufacturing the same

InventorID:

965281 ⎘