Inventor profile of:

Sundar NARAYANAN

City:

Cupertino, California

Country:

United States

Published Applications:

24

Last publication date:

2025-01-16

Top Assignees for applications by Sundar NARAYANAN

The entities that hold a legal rights for patent applications filed by inventor NARAYANAN Sundar:

Recent patent applications by NARAYANAN Sundar

Sundar NARAYANAN from Cupertino, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-01-16
US20250021832A1
Physics

INTERACTIVE DATA LABELING FOR SUBSTRATE GENERATION PROCESSES

#2 | 2024-12-26
US20240427308A1
Physics

SUBSTRATE PROCESS OPERATION ANALYSIS APPLICATION AND GENERATION OF VISUALIZATIONS

#3 | 2024-05-09
US20240152675A1
Physics

DETERMINING SUBSTRATE CHARACTERISTICS BY VIRTUAL SUBSTRATE MEASUREMENT

#4 | 2024-03-14
US20240086597A1
Physics

GENERATION AND UTILIZATION OF VIRTUAL FEATURES FOR PROCESS MODELING

#5 | 2022-10-06
US20220320432A1
Electricity

Resistive switching memory having confined filament formation and methods thereof

#6 | 2022-10-06
US20220320431A1
Electricity

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTIVE SWITCHING DEVICES

#7 | 2022-10-06
US20220320429A1
Electricity

Resistive switching memory devices and method(s) for forming the resistive switching memory devices

#8 | 2021-05-20
US20210151671A1
Electricity

Using aluminum as etch stop layer

#9 | 2020-08-18
US15486529
Electricity

Memory stack liner comprising dielectric block layer material

#10 | 2020-08-13
US20200259081A1
Electricity

Resistive random access memory and fabrication techniques

#11 | 2018-08-28
US15592982
Electricity

Flatness of memory cell surfaces

#12 | 2017-12-21
US20170365780A1
Electricity

Liner layer for dielectric block layer

#13 | 2017-10-05
US20170288139A1
Electricity

Using aluminum as etch stop layer

#14 | 2017-08-22
US14588136
Electricity

Monolithically integrated resistive memory using integrated-circuit foundry compatible processes

#15 | 2017-07-04
US15178144
Physics

Monolithic memory comprising 1T1R code memory and 1TnR storage class memory

#16 | 2017-06-08
US20170162783A1
Electricity

Regulating interface layer formation for two-terminal memory

#17 | 2017-03-14
US14337111
Electricity

Resistive random access memory (RRAM) cell and method for forming the RRAM cell

#18 | 2016-12-01
US20160351625A1
Electricity

Recessed high voltage metal oxide semiconductor transistor for RRAM cell

#19 | 2016-09-06
US14473879
Electricity

Mitigating damage from a chemical mechanical planarization process

#20 | 2016-08-23
US14335542
Electricity

Method for surface roughness reduction after silicon germanium thin film deposition

#21 | 2015-11-05
US20150318333A1
Electricity

Integrative resistive memory in backend metal layers

#22 | 2015-08-27
US20150243886A1
Electricity

Monolithically integrated resistive memory using integrated-circuit foundry compatible processes

#23 | 2015-08-13
US20150228893A1
Electricity

Scalable silicon based resistive memory device

#24 | 2014-11-13
US20140335675A1
Electricity

Regulating interface layer growth with NO for two-terminal memory

InventorID:

968280 ⎘