Cupertino, California
United States
24
2025-01-16
The entities that hold a legal rights for patent applications filed by inventor NARAYANAN Sundar:
Sundar NARAYANAN from Cupertino, US has applied for patents for these inventions. The list has both pending applications and granted patents:
INTERACTIVE DATA LABELING FOR SUBSTRATE GENERATION PROCESSES
#2 | 2024-12-26SUBSTRATE PROCESS OPERATION ANALYSIS APPLICATION AND GENERATION OF VISUALIZATIONS
#3 | 2024-05-09DETERMINING SUBSTRATE CHARACTERISTICS BY VIRTUAL SUBSTRATE MEASUREMENT
#4 | 2024-03-14GENERATION AND UTILIZATION OF VIRTUAL FEATURES FOR PROCESS MODELING
#5 | 2022-10-06Resistive switching memory having confined filament formation and methods thereof
#6 | 2022-10-06VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTIVE SWITCHING DEVICES
#7 | 2022-10-06Resistive switching memory devices and method(s) for forming the resistive switching memory devices
#8 | 2021-05-20Using aluminum as etch stop layer
#9 | 2020-08-18Memory stack liner comprising dielectric block layer material
#10 | 2020-08-13Resistive random access memory and fabrication techniques
#11 | 2018-08-28Flatness of memory cell surfaces
#12 | 2017-12-21Liner layer for dielectric block layer
#13 | 2017-10-05Using aluminum as etch stop layer
#14 | 2017-08-22Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
#15 | 2017-07-04Monolithic memory comprising 1T1R code memory and 1TnR storage class memory
#16 | 2017-06-08Regulating interface layer formation for two-terminal memory
#17 | 2017-03-14Resistive random access memory (RRAM) cell and method for forming the RRAM cell
#18 | 2016-12-01Recessed high voltage metal oxide semiconductor transistor for RRAM cell
#19 | 2016-09-06Mitigating damage from a chemical mechanical planarization process
#20 | 2016-08-23Method for surface roughness reduction after silicon germanium thin film deposition
#21 | 2015-11-05Integrative resistive memory in backend metal layers
#22 | 2015-08-27Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
#23 | 2015-08-13Scalable silicon based resistive memory device
#24 | 2014-11-13Regulating interface layer growth with NO for two-terminal memory
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