Assignee profile:

Hefei Reliance Memory Limited

City:

Hefei

Country:

China

Published Applications:

76

Last publication date:

2025-03-20

Patent Grants:

76

Last grant date:

2025-10-07

Top Inventors for applications by Hefei Reliance Memory Limited

These are the the leading inventors for applications assigned to Hefei Reliance Memory Limited:

Recent patent applications by Hefei Reliance Memory Limited

Hefei Reliance Memory Limited based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2025-03-20 ✅ Patent 12,439,609 granted on 2025-10-07
US20250098178A1
Electricity

PROCESS TECHNIQUE FOR EMBEDDED MEMORY

#2 | 2024-03-28 ✅ Patent 12,230,309 granted on 2025-02-18
US20240105247A1
Physics

Dual-precision analog memory cell and array

#3 | 2024-01-18 ✅ Patent 12,451,101 granted on 2025-10-21
US20240021173A1
Physics

DISPLAY DRIVER SYSTEM WITH EMBEDDED NON-VOLATILE MEMORY

#4 | 2023-09-28 ✅ Patent 12,327,587 granted on 2025-06-10
US20230307045A1
Physics

METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS

#5 | 2023-08-03 ✅ Patent 12,433,177 granted on 2025-09-30
US20230247920A1
Electricity

MEMORY DEVICE HAVING IMPROVED MEMORY CELL STRUCTURES TO PREVENT FORMATION OF VOIDS THEREIN

#6 | 2023-07-13 ✅ Patent 11,963,465 granted on 2024-04-16
US20230225227A1
Electricity

Non-volatile memory structure with positioned doping

#7 | 2023-05-18 ✅ Patent 11,908,515 granted on 2024-02-20
US20230154531A1
Physics

2T-1R architecture for resistive ram

#8 | 2023-04-20 ✅ Patent 11,887,645 granted on 2024-01-30
US20230118667A1
Physics

Dual-precision analog memory cell and array

#9 | 2023-04-20 ✅ Patent 12,142,241 granted on 2024-11-12
US20230118250A1
Physics

Display driver system with embedded non-volatile memory

#10 | 2023-01-26 ✅ Patent 12,133,477 granted on 2024-10-29
US20230028701A1
Electricity

Resistive random access memory and method for operating same

#11 | 2023-01-19 ✅ Patent 11,967,374 granted on 2024-04-23
US20230019326A1
Physics

Voltage-mode bit line precharge for random-access memory cells

#12 | 2023-01-19 ✅ Patent 12,144,269 granted on 2024-11-12
US20230018760A1
Electricity

Thermal field controlled electrical conductivity change device

#13 | 2023-01-12 ✅ Patent 12,027,206 granted on 2024-07-02
US20230012275A1
Physics

Techniques for initializing resistive memory devices by applying voltages with different polarities

#14 | 2022-12-22 ✅ Patent 12,232,335 granted on 2025-02-18
US20220406845A1
Electricity

RRAM process integration scheme and cell structure with reduced masking operations

#15 | 2022-10-13 ✅ Patent 12,266,300 granted on 2025-04-01
US20220328000A1
Physics

Display driver integrated circuit having embedded resistive random access memory and display device having same

#16 | 2022-09-15 ✅ Patent 11,848,050 granted on 2023-12-19
US20220293178A1
Physics

Resistance change memory cell circuits and methods

#17 | 2022-06-30 ✅ Patent 11,735,262 granted on 2023-08-22
US20220208266A1
Physics

Adaptive memory cell write conditions

#18 | 2022-06-16 ✅ Patent 11,765,914 granted on 2023-09-19
US20220190036A1
Electricity

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

#19 | 2022-05-19 ✅ Patent 11,984,163 granted on 2024-05-14
US20220157378A1
Physics

Processing unit with fast read speed memory device

#20 | 2022-04-28 ✅ Patent 11,651,820 granted on 2023-05-16
US20220130459A1
Physics

Fast read speed memory device

#21 | 2022-03-24 ✅ Patent 11,950,519 granted on 2024-04-02
US20220093856A1
Electricity

Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same

#22 | 2022-03-17 ✅ Patent 11,682,457 granted on 2023-06-20
US20220084593A1
Physics

Method of RRAM write ramping voltage in intervals

#23 | 2021-10-28 ✅ Patent 11,694,744 granted on 2023-07-04
US20210335415A1
Physics

Mixed digital-analog memory devices and circuits for secure storage and computing

#24 | 2021-09-23 ✅ Patent 11,568,929 granted on 2023-01-31
US20210295913A1
Physics

2T-1R architecture for resistive RAM

#25 | 2021-09-23 ✅ Patent 11,482,281 granted on 2022-10-25
US20210295911A1
Physics

Voltage-mode bit line precharge for random-access memory cells

#26 | 2021-08-19 ✅ Patent 11,551,739 granted on 2023-01-10
US20210257014A1
Physics

Dual-precision analog memory cell and array

#27 | 2021-07-29 ✅ Patent 11,653,580 granted on 2023-05-16
US20210234093A1
Electricity

Non-volatile memory structure with positioned doping

#28 | 2021-06-24 ✅ Patent 11,672,189 granted on 2023-06-06
US20210193917A1
Electricity

Two-terminal reversibly switchable memory device

#29 | 2021-05-06 ✅ Patent 11,348,652 granted on 2022-05-31
US20210134379A1
Physics

Neural network inference accelerator based on one-time-programmable (OTP) memory arrays with one-way selectors

#30 | 2021-04-29 ✅ Patent 11,335,636 granted on 2022-05-17
US20210125924A1
Electricity

Gradual breakdown memory cell having multiple different dielectrics

#31 | 2021-04-22 ✅ Patent 11,380,396 granted on 2022-07-05
US20210118504A1
Physics

Resistance change memory cell circuits and methods

#32 | 2021-04-15 ✅ Patent 11,468,947 granted on 2022-10-11
US20210110870A1
Physics

Techniques for initializing resistive memory devices by applying voltages with different polarities

#33 | 2021-04-01 ✅ Patent 11,289,542 granted on 2022-03-29
US20210098534A1
Electricity

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

#34 | 2021-03-18 ✅ Patent 11,024,373 granted on 2021-06-01
US20210082504A1
Physics

Voltage-mode bit line precharge for random-access memory cells

#35 | 2021-02-11 ✅ Patent 11,302,394 granted on 2022-04-12
US20210043256A1
Physics

Adaptive memory cell write conditions

#36 | 2021-01-14 ✅ Patent 11,502,249 granted on 2022-11-15
US20210013262A1
Electricity

Memory element with a reactive metal layer

#37 | 2021-01-14 ✅ Patent 11,238,930 granted on 2022-02-01
US20210012838A1
Physics

Method of RRAM WRITE ramping voltage in intervals

#38 | 2020-12-31 ✅ Patent 11,257,544 granted on 2022-02-22
US20200411093A1
Physics

Fast read speed memory device

#39 | 2020-12-17 ✅ Patent 11,227,994 granted on 2022-01-18
US20200395539A1
Electricity

Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same

#40 | 2020-12-17 ✅ Patent 11,152,062 granted on 2021-10-19
US20200395068A1
Physics

1T-1R architecture for resistive random access memory

#41 | 2020-12-03 ✅ Patent 11,462,585 granted on 2022-10-04
US20200381479A1
Electricity

RRAM process integration scheme and cell structure with reduced masking operations

#42 | 2020-11-26 ✅ Patent 11,081,168 granted on 2021-08-03
US20200372949A1
Physics

Mixed digital-analog memory devices and circuits for secure storage and computing

#43 | 2020-10-15 ✅ Patent 11,557,264 granted on 2023-01-17
US20200327865A1
Physics

Display driver system with embedded non-volatile memory

#44 | 2020-09-17 ✅ Patent 11,373,704 granted on 2022-06-28
US20200294589A1
Physics

System and method for performing memory operations in RRAM cells

#45 | 2020-09-10 ✅ Patent 10,902,915 granted on 2021-01-26
US20200286558A1
Physics

Resistance change memory cell circuits and methods

#46 | 2020-08-27 ✅ Patent 11,489,116 granted on 2022-11-01
US20200274062A1
Electricity

Thermal field controlled electrical conductivity change device

#47 | 2020-08-13 ✅ Patent 11,063,214 granted on 2021-07-13
US20200259079A1
Electricity

Two-terminal reversibly switchable memory device

#48 | 2020-07-02 ✅ Patent 11,081,176 granted on 2021-08-03
US20200211644A1
Physics

2T-1R architecture for resistive RAM

#49 | 2020-06-04 ✅ Patent 11,069,391 granted on 2021-07-20
US20200176046A1
Physics

Dual-precision analog memory cell and array

#50 | 2020-04-16 ✅ Patent 11,037,987 granted on 2021-06-15
US20200119094A1
Electricity

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

#51 | 2019-12-26 ✅ Patent 10,861,544 granted on 2020-12-08
US20190392898A1
Physics

Adaptive memory cell write conditions

#52 | 2019-12-26 ✅ Patent 10,943,655 granted on 2021-03-09
US20190392897A1
Physics

Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material

#53 | 2019-12-05 ✅ Patent 10,998,044 granted on 2021-05-04
US20190371399A1
Physics

RRAM write using a ramp control circuit

#54 | 2019-11-21 ✅ Patent 10,783,964 granted on 2020-09-22
US20190355414A1
Physics

1T-1R architecture for resistive random access memory

#55 | 2019-11-14 ✅ Patent 10,825,518 granted on 2020-11-03
US20190348115A1
Physics

Fast read speed memory device

#56 | 2019-11-07 ✅ Patent 10,614,883 granted on 2020-04-07
US20190341104A1
Physics

Resistance memory cell

#57 | 2019-10-03 ✅ Patent 10,797,106 granted on 2020-10-06
US20190305047A1
Electricity

Memory element with a reactive metal layer

#58 | 2019-09-19 ✅ Patent 11,018,295 granted on 2021-05-25
US20190288195A1
Electricity

Non-volatile memory structure with positioned doping

#59 | 2019-09-19 ✅ Patent 10,777,608 granted on 2020-09-15
US20190288037A1
Electricity

RRAM process integration scheme and cell structure with reduced masking operations

#60 | 2019-08-01 ✅ Patent 10,699,786 granted on 2020-06-30
US20190237138A1
Physics

Resistance change memory cell circuits and methods

#61 | 2019-06-06 ✅ Patent 10,680,171 granted on 2020-06-09
US20190173006A1
Electricity

Two-terminal reversibly switchable memory device

#62 | 2019-06-06 ✅ Patent 10,714,173 granted on 2020-07-14
US20190172533A1
Physics

System and method for performing memory operations in RRAM cells

#63 | 2019-05-23 ✅ Patent 10,535,714 granted on 2020-01-14
US20190157348A1
Electricity

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

#64 | 2019-05-23 ✅ Patent 10,622,062 granted on 2020-04-14
US20190156886A1
Physics

2T-1R architecture for resistive ram

#65 | 2018-12-13 ✅ Patent 10,453,526 granted on 2019-10-22
US20180358092A1
Physics

Distributed cascode current source for RRAM set current limitation

#66 | 2018-11-15 ✅ Patent 10,199,098 granted on 2019-02-05
US20180330782A1
Physics

2T-1R architecture for resistive RAM

#67 | 2018-10-04 ✅ Patent 10,388,375 granted on 2019-08-20
US20180286480A1
Physics

Fast read speed memory device

#68 | 2018-10-04 ✅ Patent 10,366,751 granted on 2019-07-30
US20180286479A1
Physics

Resistance memory cell

#69 | 2018-05-17 ✅ Patent 10,388,372 granted on 2019-08-20
US20180137914A1
Physics

1T-1R architecture for resistive random access memory

#70 | 2018-05-10 ✅ Patent 10,224,480 granted on 2019-03-05
US20180130946A1
Electricity

Two-terminal reversibly switchable memory device

#71 | 2018-05-10 ✅ Patent 10,186,553 granted on 2019-01-22
US20180130850A1
Electricity

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

#72 | 2018-05-03 ✅ Patent 10,340,312 granted on 2019-07-02
US20180122857A1
Electricity

Memory element with a reactive metal layer

#73 | 2018-05-03 ✅ Patent 10,297,320 granted on 2019-05-21
US20180122471A1
Physics

Resistance change memory cell circuits and methods

#74 | 2017-06-22 ✅ Patent 10,236,059 granted on 2019-03-19
US20170178723A1
Physics

System and method for performing memory operations on RRAM cells

#75 | 2017-01-05 ✅ Patent 10,096,360 granted on 2018-10-09
US20170004882A1
Physics

Distributed cascode current source for RRAM set current limitation

#76 | 2016-12-29 ✅ Patent 10,037,801 granted on 2018-07-31
US20160379710A1
Physics

2T-1R architecture for resistive RAM

Also check out HEFEI RELIANCE MEMORY LIMITED's (Hefei, China) applicant profile with 80 patent applications submitted.

AssigneeID:

141883 ⎘