Hefei
China
76
2025-03-20
76
2025-10-07
These are the the leading inventors for applications assigned to Hefei Reliance Memory Limited:
Hefei Reliance Memory Limited based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
PROCESS TECHNIQUE FOR EMBEDDED MEMORY
#2 | 2024-03-28 ✅ Patent 12,230,309 granted on 2025-02-18Dual-precision analog memory cell and array
#3 | 2024-01-18 ✅ Patent 12,451,101 granted on 2025-10-21DISPLAY DRIVER SYSTEM WITH EMBEDDED NON-VOLATILE MEMORY
#4 | 2023-09-28 ✅ Patent 12,327,587 granted on 2025-06-10METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS
#5 | 2023-08-03 ✅ Patent 12,433,177 granted on 2025-09-30MEMORY DEVICE HAVING IMPROVED MEMORY CELL STRUCTURES TO PREVENT FORMATION OF VOIDS THEREIN
#6 | 2023-07-13 ✅ Patent 11,963,465 granted on 2024-04-16Non-volatile memory structure with positioned doping
#7 | 2023-05-18 ✅ Patent 11,908,515 granted on 2024-02-202T-1R architecture for resistive ram
#8 | 2023-04-20 ✅ Patent 11,887,645 granted on 2024-01-30Dual-precision analog memory cell and array
#9 | 2023-04-20 ✅ Patent 12,142,241 granted on 2024-11-12Display driver system with embedded non-volatile memory
#10 | 2023-01-26 ✅ Patent 12,133,477 granted on 2024-10-29Resistive random access memory and method for operating same
#11 | 2023-01-19 ✅ Patent 11,967,374 granted on 2024-04-23Voltage-mode bit line precharge for random-access memory cells
#12 | 2023-01-19 ✅ Patent 12,144,269 granted on 2024-11-12Thermal field controlled electrical conductivity change device
#13 | 2023-01-12 ✅ Patent 12,027,206 granted on 2024-07-02Techniques for initializing resistive memory devices by applying voltages with different polarities
#14 | 2022-12-22 ✅ Patent 12,232,335 granted on 2025-02-18RRAM process integration scheme and cell structure with reduced masking operations
#15 | 2022-10-13 ✅ Patent 12,266,300 granted on 2025-04-01Display driver integrated circuit having embedded resistive random access memory and display device having same
#16 | 2022-09-15 ✅ Patent 11,848,050 granted on 2023-12-19Resistance change memory cell circuits and methods
#17 | 2022-06-30 ✅ Patent 11,735,262 granted on 2023-08-22Adaptive memory cell write conditions
#18 | 2022-06-16 ✅ Patent 11,765,914 granted on 2023-09-19Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#19 | 2022-05-19 ✅ Patent 11,984,163 granted on 2024-05-14Processing unit with fast read speed memory device
#20 | 2022-04-28 ✅ Patent 11,651,820 granted on 2023-05-16Fast read speed memory device
#21 | 2022-03-24 ✅ Patent 11,950,519 granted on 2024-04-02Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same
#22 | 2022-03-17 ✅ Patent 11,682,457 granted on 2023-06-20Method of RRAM write ramping voltage in intervals
#23 | 2021-10-28 ✅ Patent 11,694,744 granted on 2023-07-04Mixed digital-analog memory devices and circuits for secure storage and computing
#24 | 2021-09-23 ✅ Patent 11,568,929 granted on 2023-01-312T-1R architecture for resistive RAM
#25 | 2021-09-23 ✅ Patent 11,482,281 granted on 2022-10-25Voltage-mode bit line precharge for random-access memory cells
#26 | 2021-08-19 ✅ Patent 11,551,739 granted on 2023-01-10Dual-precision analog memory cell and array
#27 | 2021-07-29 ✅ Patent 11,653,580 granted on 2023-05-16Non-volatile memory structure with positioned doping
#28 | 2021-06-24 ✅ Patent 11,672,189 granted on 2023-06-06Two-terminal reversibly switchable memory device
#29 | 2021-05-06 ✅ Patent 11,348,652 granted on 2022-05-31Neural network inference accelerator based on one-time-programmable (OTP) memory arrays with one-way selectors
#30 | 2021-04-29 ✅ Patent 11,335,636 granted on 2022-05-17Gradual breakdown memory cell having multiple different dielectrics
#31 | 2021-04-22 ✅ Patent 11,380,396 granted on 2022-07-05Resistance change memory cell circuits and methods
#32 | 2021-04-15 ✅ Patent 11,468,947 granted on 2022-10-11Techniques for initializing resistive memory devices by applying voltages with different polarities
#33 | 2021-04-01 ✅ Patent 11,289,542 granted on 2022-03-29Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#34 | 2021-03-18 ✅ Patent 11,024,373 granted on 2021-06-01Voltage-mode bit line precharge for random-access memory cells
#35 | 2021-02-11 ✅ Patent 11,302,394 granted on 2022-04-12Adaptive memory cell write conditions
#36 | 2021-01-14 ✅ Patent 11,502,249 granted on 2022-11-15Memory element with a reactive metal layer
#37 | 2021-01-14 ✅ Patent 11,238,930 granted on 2022-02-01Method of RRAM WRITE ramping voltage in intervals
#38 | 2020-12-31 ✅ Patent 11,257,544 granted on 2022-02-22Fast read speed memory device
#39 | 2020-12-17 ✅ Patent 11,227,994 granted on 2022-01-18Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same
#40 | 2020-12-17 ✅ Patent 11,152,062 granted on 2021-10-191T-1R architecture for resistive random access memory
#41 | 2020-12-03 ✅ Patent 11,462,585 granted on 2022-10-04RRAM process integration scheme and cell structure with reduced masking operations
#42 | 2020-11-26 ✅ Patent 11,081,168 granted on 2021-08-03Mixed digital-analog memory devices and circuits for secure storage and computing
#43 | 2020-10-15 ✅ Patent 11,557,264 granted on 2023-01-17Display driver system with embedded non-volatile memory
#44 | 2020-09-17 ✅ Patent 11,373,704 granted on 2022-06-28System and method for performing memory operations in RRAM cells
#45 | 2020-09-10 ✅ Patent 10,902,915 granted on 2021-01-26Resistance change memory cell circuits and methods
#46 | 2020-08-27 ✅ Patent 11,489,116 granted on 2022-11-01Thermal field controlled electrical conductivity change device
#47 | 2020-08-13 ✅ Patent 11,063,214 granted on 2021-07-13Two-terminal reversibly switchable memory device
#48 | 2020-07-02 ✅ Patent 11,081,176 granted on 2021-08-032T-1R architecture for resistive RAM
#49 | 2020-06-04 ✅ Patent 11,069,391 granted on 2021-07-20Dual-precision analog memory cell and array
#50 | 2020-04-16 ✅ Patent 11,037,987 granted on 2021-06-15Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#51 | 2019-12-26 ✅ Patent 10,861,544 granted on 2020-12-08Adaptive memory cell write conditions
#52 | 2019-12-26 ✅ Patent 10,943,655 granted on 2021-03-09Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material
#53 | 2019-12-05 ✅ Patent 10,998,044 granted on 2021-05-04RRAM write using a ramp control circuit
#54 | 2019-11-21 ✅ Patent 10,783,964 granted on 2020-09-221T-1R architecture for resistive random access memory
#55 | 2019-11-14 ✅ Patent 10,825,518 granted on 2020-11-03Fast read speed memory device
#56 | 2019-11-07 ✅ Patent 10,614,883 granted on 2020-04-07Resistance memory cell
#57 | 2019-10-03 ✅ Patent 10,797,106 granted on 2020-10-06Memory element with a reactive metal layer
#58 | 2019-09-19 ✅ Patent 11,018,295 granted on 2021-05-25Non-volatile memory structure with positioned doping
#59 | 2019-09-19 ✅ Patent 10,777,608 granted on 2020-09-15RRAM process integration scheme and cell structure with reduced masking operations
#60 | 2019-08-01 ✅ Patent 10,699,786 granted on 2020-06-30Resistance change memory cell circuits and methods
#61 | 2019-06-06 ✅ Patent 10,680,171 granted on 2020-06-09Two-terminal reversibly switchable memory device
#62 | 2019-06-06 ✅ Patent 10,714,173 granted on 2020-07-14System and method for performing memory operations in RRAM cells
#63 | 2019-05-23 ✅ Patent 10,535,714 granted on 2020-01-14Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#64 | 2019-05-23 ✅ Patent 10,622,062 granted on 2020-04-142T-1R architecture for resistive ram
#65 | 2018-12-13 ✅ Patent 10,453,526 granted on 2019-10-22Distributed cascode current source for RRAM set current limitation
#66 | 2018-11-15 ✅ Patent 10,199,098 granted on 2019-02-052T-1R architecture for resistive RAM
#67 | 2018-10-04 ✅ Patent 10,388,375 granted on 2019-08-20Fast read speed memory device
#68 | 2018-10-04 ✅ Patent 10,366,751 granted on 2019-07-30Resistance memory cell
#69 | 2018-05-17 ✅ Patent 10,388,372 granted on 2019-08-201T-1R architecture for resistive random access memory
#70 | 2018-05-10 ✅ Patent 10,224,480 granted on 2019-03-05Two-terminal reversibly switchable memory device
#71 | 2018-05-10 ✅ Patent 10,186,553 granted on 2019-01-22Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#72 | 2018-05-03 ✅ Patent 10,340,312 granted on 2019-07-02Memory element with a reactive metal layer
#73 | 2018-05-03 ✅ Patent 10,297,320 granted on 2019-05-21Resistance change memory cell circuits and methods
#74 | 2017-06-22 ✅ Patent 10,236,059 granted on 2019-03-19System and method for performing memory operations on RRAM cells
#75 | 2017-01-05 ✅ Patent 10,096,360 granted on 2018-10-09Distributed cascode current source for RRAM set current limitation
#76 | 2016-12-29 ✅ Patent 10,037,801 granted on 2018-07-312T-1R architecture for resistive RAM
Also check out HEFEI RELIANCE MEMORY LIMITED's (Hefei, China) applicant profile with 80 patent applications submitted.
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