Atherton, California
United States
18
2022-06-16
The entities that hold a legal rights for patent applications filed by inventor Meyer Rene:
Rene Meyer from Atherton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#2 | 2021-04-01Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#3 | 2020-04-16Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#4 | 2019-05-23Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#5 | 2018-05-10Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#6 | 2014-12-18Conductive metal oxide structures in non-volatile re-writable memory devices
#7 | 2014-11-27Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
#8 | 2014-01-09Conductive metal oxide structures in non volatile re-writable memory devices
#9 | 2013-08-22Conductive metal oxide structures in non volatile re writable memory devices
#10 | 2013-04-04Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
#11 | 2013-04-04Memory Device Using Multiple Tunnel Oxide Layers
#12 | 2013-02-21Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements
#13 | 2012-11-29Non-volatile memory device ion barrier
#14 | 2012-02-23Conductive metal oxide structures in non-volatile re-writable memory devices
#15 | 2012-02-16Non volatile memory device ion barrier
#16 | 2012-02-02Conductive metal oxide structures in non volatile re writable memory devices
#17 | 2011-12-29Memory device using ion implant isolated conductive metal oxide
#18 | 2011-12-29Memory Device Using A Dual Layer Conductive Metal Oxide Structure
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