Buellton, California
United States
53
2023-05-25
48
2023-08-29
These are the the leading inventors for applications assigned to SixPoint Materials, Inc.:
SixPoint Materials, Inc. based in Buellton, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Terahertz Gunn oscillator using gallium nitride
#2 | 2021-11-18 ✅ Patent 11,767,609 granted on 2023-09-26Low-dislocation bulk GaN crystal and method of fabricating same
#3 | 2019-03-28 ✅ Patent 10,242,868 granted on 2019-03-26Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#4 | 2019-03-28 ✅ Patent 10,354,863 granted on 2019-07-16Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#5 | 2019-03-28 ✅ Patent 10,287,709 granted on 2019-05-14Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#6 | 2018-06-28 ✅ Patent 10,355,115 granted on 2019-07-16Electronic device using group III nitride semiconductor and its fabrication method
#7 | 2018-06-28 ✅ Patent 10,134,883 granted on 2018-11-20Electronic device using group III nitride semiconductor and its fabrication method
#8 | 2018-06-28 ✅ Patent 10,134,884 granted on 2018-11-20Electronic device using group III nitride semiconductor and its fabrication method
#9 | 2018-06-28 ✅ Patent 10,141,435 granted on 2018-11-27Electronic device using group III nitride semiconductor and its fabrication method
#10 | 2016-12-29 ✅ Patent 9,783,910 granted on 2017-10-10High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
#11 | 2016-12-29 ✅ Patent 9,885,121 granted on 2018-02-06High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
#12 | 2016-10-06 ✅ Patent 9,685,327 granted on 2017-06-20Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
#13 | 2016-09-27 ✅ Patent 9,452,495 granted on 2016-09-27Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer
#14 | 2016-07-28 ✅ Patent 9,909,230 granted on 2018-03-06Seed selection and growth methods for reduced-crack group III nitride bulk crystals
#15 | 2016-06-09 ✅ Patent 9,754,782 granted on 2017-09-05Group III nitride substrates and their fabrication method
#16 | 2016-06-09 ✅ Patent 9,673,044 granted on 2017-06-06Group III nitride substrates and their fabrication method
#17 | 2016-06-02 ✅ Patent 9,670,594 granted on 2017-06-06Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
#18 | 2016-06-02 ✅ Patent 9,822,465 granted on 2017-11-21Method of fabricating group III nitride with gradually degraded crystal structure
#19 | 2016-06-02 ✅ Patent 9,790,616 granted on 2017-10-17Method of fabricating bulk group III nitride crystals in supercritical ammonia
#20 | 2016-05-12 ✅ Patent 9,435,051 granted on 2016-09-06Bismuth-doped semi-insulating group III nitride wafer and its production method
#21 | 2016-02-11 ✅ Patent 10,316,431 granted on 2019-06-11Method of growing group III nitride crystals
#22 | 2016-01-07 ✅ Patent 10,087,548 granted on 2018-10-02High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#23 | 2015-11-26 ✅ Patent 9,790,617 granted on 2017-10-17Group III nitride bulk crystals and their fabrication method
#24 | 2015-11-26 ✅ Patent 10,161,059 granted on 2018-12-25Group III nitride bulk crystals and their fabrication method
#25 | 2015-11-19 ✅ Patent 10,156,530 granted on 2018-12-18Group III nitride wafers and fabrication method and testing method
#26 | 2015-11-19 ✅ Patent 10,024,809 granted on 2018-07-17Group III nitride wafers and fabrication method and testing method
#27 | 2015-03-19 ✅ Patent 9,441,311 granted on 2016-09-13Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
#28 | 2015-01-15 ✅ Patent 9,349,592 granted on 2016-05-24Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness
#29 | 2015-01-15 ✅ Patent 9,305,772 granted on 2016-04-05Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#30 | 2015-01-15 ✅ Patent 9,466,481 granted on 2016-10-11Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#31 | 2014-11-06REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS
#32 | 2014-07-31METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH
#33 | 2014-06-26 ✅ Patent 9,985,102 granted on 2018-05-29Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
#34 | 2014-03-27 ✅ Patent 9,518,340 granted on 2016-12-13Method of growing group III nitride crystals
#35 | 2014-03-27 ✅ Patent 9,202,872 granted on 2015-12-01Method of growing group III nitride crystals
#36 | 2014-03-27GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD
#37 | 2014-03-06 ✅ Patent 8,921,231 granted on 2014-12-30Group III nitride wafer and its production method
#38 | 2014-03-06 ✅ Patent 9,543,393 granted on 2017-01-10Group III nitride wafer and its production method
#39 | 2014-02-27 ✅ Patent 9,224,817 granted on 2015-12-29Composite substrate of gallium nitride and metal oxide
#40 | 2014-02-27 ✅ Patent 9,255,342 granted on 2016-02-09Bismuth-doped semi-insulating group III nitride wafer and its production method
#41 | 2013-08-22HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
#42 | 2013-08-15HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
#43 | 2013-05-30 ✅ Patent 8,585,822 granted on 2013-11-19Method for testing group III-nitride wafers and group III-nitride wafers with test data
#44 | 2013-05-16 ✅ Patent 8,557,043 granted on 2013-10-15Method for testing group III-nitride wafers and group III-nitride wafers with test data
#45 | 2012-12-27 ✅ Patent 8,920,762 granted on 2014-12-30Synthesis method of transition metal nitride and transition metal nitride
#46 | 2012-12-27 ✅ Patent 8,971,018 granted on 2015-03-03Ultracapacitors using transition metal nitride-containing electrode and transition metal nitride
#47 | 2012-12-06 ✅ Patent 8,420,041 granted on 2013-04-16High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#48 | 2010-11-11 ✅ Patent 8,764,903 granted on 2014-07-01Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
#49 | 2010-05-27 ✅ Patent 8,852,341 granted on 2014-10-07Methods for producing GaN nutrient for ammonothermal growth
#50 | 2010-03-18 ✅ Patent 8,236,267 granted on 2012-08-07High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
#51 | 2009-12-24 ✅ Patent 8,357,243 granted on 2013-01-22Method for testing group III-nitride wafers and group III-nitride wafers with test data
#52 | 2009-12-17 ✅ Patent 8,728,234 granted on 2014-05-20Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
#53 | 2009-10-15 ✅ Patent 9,803,293 granted on 2017-10-31Method for producing group III-nitride wafers and group III-nitride wafers
Also check out SixPoint Materials, Inc.'s (Buellton, United States) applicant profile with 41 patent applications submitted.
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