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Inventor profile of:

Edward Letts

City:

Buellton, California

Country:

United States

Published Applications:

36

Last publication date:

2019-03-28

Top Assignees for applications by Edward Letts

The entities that hold a legal rights for patent applications filed by inventor Letts Edward:

Recent patent applications by Letts Edward

Edward Letts from Buellton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-03-28
US20190096668A1
Electricity

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

 #2 | 2019-03-28
US20190096667A1
Electricity

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

 #3 | 2019-03-28
US20190093256A1
Chemistry; metallurgy

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

 #4 | 2019-03-28
US20190091807A1
Performing operations; transporting

SEED CRYSTAL FOR GROWTH OF GALLIUM NITRIDE BULK CRYSTAL IN SUPERCRITICAL AMMONIA AND FABRICATION METHOD

 #5 | 2017-07-13
US20170198407A1
Chemistry; metallurgy

METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH

 #6 | 2017-06-22
US20170175295A1
Chemistry; metallurgy

METHOD FOR PRODUCING GROUP III NITRIDE WAFERS AND GROUP III NITRIDE WAFERS

 #7 | 2016-07-28
US20160215410A1
Chemistry; metallurgy

Seed selection and growth methods for reduced-crack group III nitride bulk crystals

 #8 | 2016-05-12
US20160130720A1
Chemistry; metallurgy

Bismuth-doped semi-insulating group III nitride wafer and its production method

 #9 | 2016-02-11
US20160040318A1
Chemistry; metallurgy

Method of growing group III nitride crystals

 #10 | 2016-01-14
US20160010238A1
Chemistry; metallurgy

METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSEL

 #11 | 2016-01-07
US20160002817A1
Chemistry; metallurgy

High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

 #12 | 2015-11-26
US20150340444A1
Electricity

Group III nitride bulk crystals and their fabrication method

 #13 | 2015-11-26
US20150337457A1
Chemistry; metallurgy

GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD

 #14 | 2015-11-26
US20150337453A1
Chemistry; metallurgy

Group III nitride bulk crystals and their fabrication method

 #15 | 2015-07-23
US20150203991A1
Chemistry; metallurgy

Group III nitride bulk crystals and fabrication method

 #16 | 2015-03-19
US20150075421A1
Chemistry; metallurgy

Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride

 #17 | 2014-11-06
US20140326175A1
Chemistry; metallurgy

REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS

 #18 | 2014-07-31
US20140209925A1
Electricity

METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH

 #19 | 2014-06-26
US20140174340A1
Chemistry; metallurgy

Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth

 #20 | 2014-03-27
US20140087209A1
Electricity

Method of growing group III nitride crystals

 #21 | 2014-03-27
US20140087113A1
Electricity

Method of growing group III nitride crystals

 #22 | 2014-03-06
US20140065796A1
Electricity

Group III nitride wafer and its production method

 #23 | 2014-03-06
US20140061662A1
Electricity

Group III nitride wafer and its production method

 #24 | 2014-02-27
US20140054589A1
Chemistry; metallurgy

Bismuth-doped semi-insulating group III nitride wafer and its production method

 #25 | 2013-08-22
US20130216845A1
Chemistry; metallurgy

HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL

 #26 | 2013-08-15
US20130206057A1
Chemistry; metallurgy

HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL

 #27 | 2013-05-30
US20130135005A1
Physics

Method for testing group III-nitride wafers and group III-nitride wafers with test data

 #28 | 2013-05-16
US20130119399A1
Electricity

Method for testing group III-nitride wafers and group III-nitride wafers with test data

 #29 | 2012-12-06
US20120304917A1
Chemistry; metallurgy

High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

 #30 | 2010-11-11
US20100285657A1
Chemistry; metallurgy

Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride

 #31 | 2010-05-27
US20100126411A1
Chemistry; metallurgy

Methods for producing GaN nutrient for ammonothermal growth

 #32 | 2010-04-22
US20100095882A1
Chemistry; metallurgy

REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS

 #33 | 2010-03-18
US20100068118A1
Chemistry; metallurgy

High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

 #34 | 2009-12-24
US20090315151A1
Physics

Method for testing group III-nitride wafers and group III-nitride wafers with test data

 #35 | 2009-12-17
US20090309105A1
Electricity

Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth

 #36 | 2009-10-15
US20090256240A1
Chemistry; metallurgy

Method for producing group III-nitride wafers and group III-nitride wafers
InventorID:

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