Assignee profile:

ATOMERA INCORPORATED

City:

Los Gatos, California

Country:

United States

Published Applications:

114

Last publication date:

2025-07-03

Patent Grants:

111

Last grant date:

2025-05-20

Top Inventors for applications by ATOMERA INCORPORATED

These are the the leading inventors for applications assigned to ATOMERA INCORPORATED:

Recent patent applications by ATOMERA INCORPORATED

ATOMERA INCORPORATED based in Los Gatos, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2025-07-03
US20250218499A1
Physics

Integrated Circuit Chip Including Arrays Of Multi-Threaded Dynamic Random Access Memory Unit Cells

#2 | 2025-07-03
US20250218468A1
Physics

Interconnect Structure For An Array Of Multi-Threaded Dynamic Random Access Memory Systems

#3 | 2025-04-17
US20250124971A1
Physics

Single-Ended Sense Amplifiers And Methods For Operating Same

#4 | 2025-01-09 ✅ Patent 12,308,229 granted on 2025-05-20
US20250014896A1
Electricity

Method for making memory device including a superlattice gettering layer

#5 | 2024-11-14 ✅ Patent 12,382,689 granted on 2025-08-05
US20240379824A1
Electricity

METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD PLATE FOR DRIFT REGION DIFFUSION

#6 | 2024-10-10 ✅ Patent 12,322,594 granted on 2025-06-03
US20240339319A1
Electricity

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

#7 | 2024-09-26 ✅ Patent 12,230,694 granted on 2025-02-18
US20240322015A1
Electricity

Method for making nanostructure transistors with source/drain trench contact liners

#8 | 2024-09-26 ✅ Patent 12,142,669 granted on 2024-11-12
US20240322014A1
Electricity

Method for making nanostructure transistors with flush source/drain dopant blocking structures including a superlattice

#9 | 2024-09-26 ✅ Patent 12,142,662 granted on 2024-11-12
US20240322005A1
Electricity

Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlattice

#10 | 2024-09-26 ✅ Patent 12,417,912 granted on 2025-09-16
US20240321575A1
Electricity

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE

#11 | 2024-09-19 ✅ Patent 12,315,722 granted on 2025-05-27
US20240312781A1
Electricity

Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlattice

#12 | 2024-07-25 ✅ Patent 12,635,155 granted on 2026-05-19
US20240250146A1
Electricity

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLECTOR SUPERLATTICES

#13 | 2024-06-13 ✅ Patent 12,315,723 granted on 2025-05-27
US20240194482A1
Electricity

Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms

#14 | 2024-05-23 ✅ Patent 12,477,798 granted on 2025-11-18
US20240170539A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND ENRICHED SILICON 28 EPITAXIAL LAYER

#15 | 2024-05-16 ✅ Patent 12,635,122 granted on 2026-05-19
US20240164082A1
Electricity

Multi-Chip Memory System Including DRAM Chips With Integrated Comparator Arrays And Method Of Operating Same

#16 | 2024-03-21 ✅ Patent 12,199,180 granted on 2025-01-14
US20240097026A1
Electricity

Semiconductor device including a superlattice and an asymmetric channel and related methods

#17 | 2024-03-21 ✅ Patent 12,439,618 granted on 2025-10-07
US20240097003A1
Electricity

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLECTOR SUPERLATTICES

#18 | 2024-02-29 ✅ Patent 12,635,271 granted on 2026-05-19
US20240072096A1
Electricity

METHOD FOR MAKING IMAGE SENSOR DEVICES INCLUDING A SUPERLATTICE

#19 | 2024-02-29 ✅ Patent 12,575,199 granted on 2026-03-10
US20240072095A1
Electricity

IMAGE SENSOR DEVICES INCLUDING A SUPERLATTICE

#20 | 2024-02-22 ✅ Patent 12,119,380 granted on 2024-10-15
US20240063268A1
Electricity

Method for making semiconductor device including superlattice with oxygen and carbon monolayers

#21 | 2023-12-07 ✅ Patent 12,046,470 granted on 2024-07-23
US20230395374A1
Electricity

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

#22 | 2023-11-09 ✅ Patent 12,267,996 granted on 2025-04-01
US20230363150A1
Electricity

DRAM sense amplifier architecture with reduced power consumption and related methods

#23 | 2023-11-09 ✅ Patent 12,199,148 granted on 2025-01-14
US20230361178A1
Electricity

Semiconductor device including superlattice with O18 enriched monolayers

#24 | 2023-11-02 ✅ Patent 12,014,923 granted on 2024-06-18
US20230352299A1
Electricity

Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice

#25 | 2023-05-04 ✅ Patent 11,721,546 granted on 2023-08-08
US20230136797A1
Electricity

Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms

#26 | 2023-05-04 ✅ Patent 11,631,584 granted on 2023-04-18
US20230135451A1
Electricity

Method for making semiconductor device with selective etching of superlattice to define etch stop layer

#27 | 2023-04-20 ✅ Patent 12,142,641 granted on 2024-11-12
US20230122723A1
Electricity

Method for making gate-all-around (GAA) device including a superlattice

#28 | 2023-04-20 ✅ Patent 11,978,771 granted on 2024-05-07
US20230121774A1
Electricity

Gate-all-around (GAA) device including a superlattice

#29 | 2022-12-01 ✅ Patent 11,682,712 granted on 2023-06-20
US20220384612A1
Electricity

Method for making semiconductor device including superlattice with O18 enriched monolayers

#30 | 2022-12-01 ✅ Patent 11,728,385 granted on 2023-08-15
US20220384579A1
Electricity

Semiconductor device including superlattice with Oenriched monolayers

#31 | 2022-11-24 ✅ Patent 12,439,658 granted on 2025-10-07
US20220376047A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK FUNCTION TUNING

#32 | 2022-11-17 ✅ Patent 11,923,431 granted on 2024-03-05
US20220367676A1
Electricity

Bipolar junction transistors including emitter-base and base-collector superlattices

#33 | 2022-11-17 ✅ Patent 11,935,940 granted on 2024-03-19
US20220367675A1
Electricity

Methods for making bipolar junction transistors including emitter-base and base-collector superlattices

#34 | 2022-11-03 ✅ Patent 11,923,418 granted on 2024-03-05
US20220352322A1
Electricity

Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

#35 | 2022-10-27 ✅ Patent 11,810,784 granted on 2023-11-07
US20220344155A1
Electricity

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

#36 | 2022-09-08 ✅ Patent 11,664,427 granted on 2023-05-30
US20220285498A1
Electricity

Vertical semiconductor device with enhanced contact structure and associated methods

#37 | 2022-09-08 ✅ Patent 11,742,202 granted on 2023-08-29
US20220285153A1
Electricity

Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice

#38 | 2022-09-08 ✅ Patent 12,020,926 granted on 2024-06-25
US20220285152A1
Electricity

Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice

#39 | 2022-07-28 ✅ Patent 11,869,968 granted on 2024-01-09
US20220238710A1
Electricity

Semiconductor device including a superlattice and an asymmetric channel and related methods

#40 | 2022-01-06 ✅ Patent 11,848,356 granted on 2023-12-19
US20220005927A1
Electricity

Method for making semiconductor device including superlattice with oxygen and carbon monolayers

#41 | 2022-01-06 ✅ Patent 11,837,634 granted on 2023-12-05
US20220005926A1
Electricity

Semiconductor device including superlattice with oxygen and carbon monolayers

#42 | 2022-01-06 ✅ Patent 12,191,160 granted on 2025-01-07
US20220005706A1
Electricity

Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities

#43 | 2021-12-16 ✅ Patent 11,569,368 granted on 2023-01-31
US20210391446A1
Electricity

Method for making semiconductor device including a superlattice and providing reduced gate leakage

#44 | 2021-12-16 ✅ Patent 11,469,302 granted on 2022-10-11
US20210391426A1
Electricity

Semiconductor device including a superlattice and providing reduced gate leakage

#45 | 2021-08-26 ✅ Patent 11,302,823 granted on 2022-04-12
US20210265509A1
Electricity

Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers

#46 | 2021-08-26 ✅ Patent 11,177,351 granted on 2021-11-16
US20210265465A1
Electricity

Semiconductor device including a superlattice with different non-semiconductor material monolayers

#47 | 2021-07-27 ✅ Patent 11,075,078 granted on 2021-07-27
US16810957
Electricity

Method for making a semiconductor device including a superlattice within a recessed etch

#48 | 2021-07-15 ✅ Patent 11,437,487 granted on 2022-09-06
US20210217880A1
Electricity

Bipolar junction transistors including emitter-base and base-collector superlattices

#49 | 2021-07-15 ✅ Patent 11,437,486 granted on 2022-09-06
US20210217875A1
Electricity

Methods for making bipolar junction transistors including emitter-base and base-collector superlattices

#50 | 2021-03-11 ✅ Patent 11,387,325 granted on 2022-07-12
US20210074814A1
Electricity

Vertical semiconductor device with enhanced contact structure and associated methods

#51 | 2021-01-21 ✅ Patent 10,937,888 granted on 2021-03-02
US20210020759A1
Electricity

Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices

#52 | 2021-01-21 ✅ Patent 10,937,868 granted on 2021-03-02
US20210020750A1
Electricity

Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices

#53 | 2021-01-21 ✅ Patent 11,183,565 granted on 2021-11-23
US20210020749A1
Electricity

Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods

#54 | 2021-01-21 ✅ Patent 10,879,357 granted on 2020-12-29
US20210020748A1
Electricity

Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice

#55 | 2020-12-31 ✅ Patent 11,430,869 granted on 2022-08-30
US20200411645A1
Electricity

Method for making superlattice structures with reduced defect densities

#56 | 2020-12-15 ✅ Patent 10,868,120 granted on 2020-12-15
US16513943
Electricity

Method for making a varactor with hyper-abrupt junction region including a superlattice

#57 | 2020-11-17 ✅ Patent 10,840,388 granted on 2020-11-17
US16513932
Electricity

Varactor with hyper-abrupt junction region including a superlattice

#58 | 2020-11-03 ✅ Patent 10,825,901 granted on 2020-11-03
US16513895
Electricity

Semiconductor devices including hyper-abrupt junction region including a superlattice

#59 | 2020-11-03 ✅ Patent 10,825,902 granted on 2020-11-03
US16513845
Electricity

Varactor with hyper-abrupt junction region including spaced-apart superlattices

#60 | 2020-10-29 ✅ Patent 11,329,154 granted on 2022-05-10
US20200343380A1
Electricity

Semiconductor device including a superlattice and an asymmetric channel and related methods

#61 | 2020-10-29 ✅ Patent 11,094,818 granted on 2021-08-17
US20200343367A1
Electricity

Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods

#62 | 2020-05-21 ✅ Patent 10,847,618 granted on 2020-11-24
US20200161430A1
Electricity

Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance

#63 | 2020-05-21 ✅ Patent 10,818,755 granted on 2020-10-27
US20200161429A1
Electricity

Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance

#64 | 2020-05-21 ✅ Patent 10,854,717 granted on 2020-12-01
US20200161428A1
Electricity

Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance

#65 | 2020-05-21 ✅ Patent 10,840,337 granted on 2020-11-17
US20200161427A1
Electricity

Method for making a FINFET having reduced contact resistance

#66 | 2020-05-21 ✅ Patent 10,840,336 granted on 2020-11-17
US20200161426A1
Electricity

Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods

#67 | 2020-05-21 ✅ Patent 10,840,335 granted on 2020-11-17
US20200161425A1
Electricity

Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance

#68 | 2020-03-17 ✅ Patent 10,593,761 granted on 2020-03-17
US16192959
Electricity

Method for making a semiconductor device having reduced contact resistance

#69 | 2020-03-05 ✅ Patent 10,811,498 granted on 2020-10-20
US20200075731A1
Electricity

Method for making superlattice structures with reduced defect densities

#70 | 2020-03-05 ✅ Patent 10,566,191 granted on 2020-02-18
US20200075327A1
Electricity

Semiconductor device including superlattice structures with reduced defect densities

#71 | 2020-03-03 ✅ Patent 10,580,866 granted on 2020-03-03
US16192941
Electricity

Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance

#72 | 2020-03-03 ✅ Patent 10,580,867 granted on 2020-03-03
US16192930
Electricity

FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance

#73 | 2019-10-17 ✅ Patent 11,355,667 granted on 2022-06-07
US20190319167A1
Electricity

Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

#74 | 2019-10-17 ✅ Patent 10,763,370 granted on 2020-09-01
US20190319136A1
Electricity

Inverted T channel field effect transistor (ITFET) including a superlattice

#75 | 2019-10-17 ✅ Patent 11,664,459 granted on 2023-05-30
US20190319135A1
Electricity

Method for making an inverted T channel field effect transistor (ITFET) including a superlattice

#76 | 2019-10-17 ✅ Patent 10,884,185 granted on 2021-01-05
US20190317277A1
Physics

Semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

#77 | 2019-09-12 ✅ Patent 10,777,451 granted on 2020-09-15
US20190280090A1
Electricity

Semiconductor device including enhanced contact structures having a superlattice

#78 | 2019-09-12 ✅ Patent 10,879,356 granted on 2020-12-29
US20190279897A1
Electricity

Method for making a semiconductor device including enhanced contact structures having a superlattice

#79 | 2019-09-12 ✅ Patent 10,727,049 granted on 2020-07-28
US20190279869A1
Electricity

Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice

#80 | 2019-09-12 ✅ Patent 10,468,245 granted on 2019-11-05
US20190279868A1
Electricity

Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice

#81 | 2019-06-20 ✅ Patent 10,355,151 granted on 2019-07-16
US20190189818A1
Electricity

CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk

#82 | 2019-06-20 ✅ Patent 10,396,223 granted on 2019-08-27
US20190189817A1
Electricity

Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk

#83 | 2019-06-20 ✅ Patent 10,361,243 granted on 2019-07-23
US20190189677A1
Electricity

Method for making CMOS image sensor including superlattice to enhance infrared light absorption

#84 | 2019-06-20 ✅ Patent 10,461,118 granted on 2019-10-29
US20190189676A1
Electricity

Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk

#85 | 2019-06-20 ✅ Patent 10,529,768 granted on 2020-01-07
US20190189670A1
Electricity

Method for making CMOS image sensor including pixels with read circuitry having a superlattice

#86 | 2019-06-20 ✅ Patent 10,367,028 granted on 2019-07-30
US20190189669A1
Electricity

CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice

#87 | 2019-06-20 ✅ Patent 10,615,209 granted on 2020-04-07
US20190189665A1
Electricity

CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice

#88 | 2019-06-20 ✅ Patent 10,529,757 granted on 2020-01-07
US20190189658A1
Electricity

CMOS image sensor including pixels with read circuitry having a superlattice

#89 | 2019-06-20 ✅ Patent 10,608,027 granted on 2020-03-31
US20190189657A1
Electricity

Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice

#90 | 2019-06-20 ✅ Patent 10,304,881 granted on 2019-05-28
US20190189652A1
Electricity

CMOS image sensor with buried superlattice layer to reduce crosstalk

#91 | 2019-04-30 ✅ Patent 10,211,251 granted on 2019-02-19
US15842989
Electricity

CMOS image sensor including superlattice to enhance infrared light absorption

#92 | 2019-02-21 ✅ Patent 10,741,436 granted on 2020-08-11
US20190057896A1
Electricity

Method for making a semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface

#93 | 2018-12-13 ✅ Patent 10,367,064 granted on 2019-07-30
US20180358442A1
Electricity

Semiconductor device with recessed channel array transistor (RCAT) including a superlattice

#94 | 2018-12-13 ✅ Patent 10,636,879 granted on 2020-04-28
US20180358361A1
Electricity

Method for making DRAM with recessed channel array transistor (RCAT) including a superlattice

#95 | 2018-11-22 ✅ Patent 10,381,242 granted on 2019-08-13
US20180337064A1
Electricity

Method for making a semiconductor device including a superlattice as a gettering layer

#96 | 2018-11-22 ✅ Patent 10,410,880 granted on 2019-09-10
US20180337063A1
Electricity

Semiconductor device including a superlattice as a gettering layer

#97 | 2018-10-23 ✅ Patent 10,109,479 granted on 2018-10-23
US15664028
Electricity

Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice

#98 | 2018-02-22 ✅ Patent 10,191,105 granted on 2019-01-29
US20180052205A1
Physics

Method for making a semiconductor device including threshold voltage measurement circuitry

#99 | 2018-02-22 ✅ Patent 10,107,854 granted on 2018-10-23
US20180052196A1
Physics

Semiconductor device including threshold voltage measurement circuitry

#100 | 2018-02-08 ✅ Patent 10,170,603 granted on 2019-01-01
US20180040743A1
Electricity

Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers

Also check out Atomera Incorporated's (Los Gatos, United States) applicant profile with 166 patent applications submitted.

AssigneeID:

350352 ⎘