Nippon Mining & Metals Co., Ltd.

Substrate and manufacturing method therefor

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Substrate and manufacturing method therefor

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Target of high-purity nickel or nickel alloy and its producing method

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Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion

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Plated article having metal thin film formed by electroless plating

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Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

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Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal

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Semiconductor substrate for epitaxial growth and manufacturing method thereof

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Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film

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Method for recovering metal from ore

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Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film

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Hafnium silicide target for forming gate oxide film, and method for preparation thereof

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Highly pure hafnium material, target and thin film comprising the same and method for producing highly pure hafnium

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Cathode material for lithium secondary battery and manufacturing method thereof

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Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film

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Hafnium silicide target for forming gate oxide film and method for preparation thereof

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Two-layer flexible substrate

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Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor

#19 | 2009-03-26 ✅ Patent 7,704,307 granted on 2010-04-27

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Electroless palladium plating liquid

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Method of surface treatment using imidazole compound

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Hydrogen separation membrane, sputtering target for forming said hydrogen separation membrane, and manufacturing method thereof

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Method of operating non-ferrous smelting plant

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Heat treatment method of ZnTe single crystal substrate and ZnTe single crystal substrate

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Substrate for growing compound semiconductor and epitaxial growth method

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Sputtering target, thin film for optical information recording medium and process for producing the same

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Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target

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Method for analyzing minute amounts of Pd, Rh and Ru, and high frequency plasma mass spectroscope used for same

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Method for producing ammonium hexachlororuthenate and ruthenium powder, as well as ammonium hexachlororuthenate

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Iron-based sintered compact and method for production thereof

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Resin substrate material, electronic component substrate material manufactured by electroless plating on the same, and method for manufacturing electronic component substrate material

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Taphole cooling structure

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Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it

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CdTe system compound semiconductor single crystal

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Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

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Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal

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Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

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Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

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Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device

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Method for leaching gold

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Copper electrolytic solution containing amine compound having specific skeleton and organosulfur compound as additives, and electrolytic copper foil produced using the same

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Method for connecting magnetic substance target to backing plate, and magnetic substance target

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InP single crystal wafer and method for producing InP single crystal

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Pretreating agent for electroless plating, method of electroless plating using the same and product of electroless plating

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Sb-Te alloy sintered compact sputtering target

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Metallic powder for powder metallurgy whose main component is iron and iron-based sintered body

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Method for growing epitaxial crystal

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Method for recovering rhodium and silver from hydrochloric acid

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High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder

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Determination method and processing method of machined surface of plate-like material, and apparatus for use in said methods

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Metallic powder for powder metallurgy whose main component is iron and iron-based sintered body

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Wafer storage container

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Electroless gold plating solution

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Vapor phase growth method

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AlRu sputtering target and manufacturing method thereof

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Copper electrolytic solution containing as additive compound having specific skeleton, and electrolytic copper foil manufactured therewith

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Manganese alloy sputtering target and method for producing the same

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Vapor phase growth apparatus

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Surface-treating agent for metal

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Hafnium silicide target for gate oxide film formation and its production method

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Packaging device and packaging method for hollow cathode type sputtering target

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High purity zinc oxide powder and method for production thereof, and high purity zinc oxide target and thin film of high purity zinc oxide

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Nickel alloy sputtering target and nickel alloy thin film

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Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target

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Tantalum sputtering target and method for preparation thereof

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Tantalum sputtering target and method for preparation thereof

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High purity copper sulfate and method for production thereof

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Copper electrolytic solution containing quaternary amine compound with specific skeleton and oragno-sulfur compound as additives, and electrolytic copper foil manufactured using the same

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Electroless copper plating solution

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Process for producing compound semiconductor single crystal

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ITO sputtering target

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Method of separating and processing catalyst carriers

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Hafnium alloy target and process for producing the same

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Epitaxial growth process

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Sputtering target, thin film for optical information recording medium and process for producing the same

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Target of high-purity nickel or nickel alloy and its producing method

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Sputtering target and process for producing the same

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Copper alloy sputtering target process for producing the same and semiconductor element wiring

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Epitaxial growth method and substrate for epitaxial growth

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Iron silicide powder and method for production thereof

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Copper alloy sputtering target and semiconductor element wiring

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Iron-based sintered compact and method for production thereof

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Ta sputtering target and method for preparation thereof

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Vapor-phase growth apparatus

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CdTe single crystal and CdTe polycrystal, and method for preparation thereof

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Vapor-phase epitaxial apparatus and vapor phase epitaxial method

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Metal powder for powder metallurgy and iron-based sintered compact

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Tantalum sputtering target and method for preparation thereof

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Metal plating method and pretreatment agent

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Production method for compound semiconductor single crystal

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Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target

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Crystal manufacturing method

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Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target

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Electrolytic method in diaphragm-type cell

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